Abstract: A non-volatile semiconductor memory device includes a memory cell array in which electrically erasable and programmable memory cells are arrayed, each of the memory cells storing therein a first logic state with a threshold voltage lower than or equal to a first value or a second logic state with a threshold voltage higher than or equal to a second value that is higher than the first value, a data hold circuit for holding program data and sensing data as read out of the memory cell array, and a controller configured to control a program sequence, wherein the controller has the control functions of: a program control function for applying a program voltage to a selected memory cell of the memory cell array to let the data shift from the first logic state to the second logic state; a program verify control function for verifying that the programmed data of the selected memory cell shifted to the second logic state; an erratic program verify control function for checking that the threshold voltage of a memory ce

Abstract: A non-volatile semiconductor memory device includes a memory cell array in which electrically erasable and programmable memory cells are arrayed, each of the memory cells storing therein a first logic state with a threshold voltage lower than or equal to a first value or a second logic state with a threshold voltage higher than or equal to a second value that is higher than the first value, a data hold circuit for holding program data and sensing data as read out of the memory cell array, and a controller configured to control a program sequence, wherein the controller has the control functions of: a program control function for applying a program voltage to a selected memory cell of the memory cell array to let the data shift from the first logic state to the second logic state; a program verify control function for verifying that the programmed data of the selected memory cell shifted to the second logic state; an erratic program verify control function for checking that the threshold voltage of a memory ce

Abstract: A non-volatile semiconductor memory device includes a memory cell array, a data hold circuit, and a controller A program control function applies a program voltage to a selected memory cell to let data shift from a first logic state to a second logic state. A program verify control function verifies that a programmed data of the selected memory cell shifted to the second logic state. An erratic program verify control function checks that a threshold voltage of a memory cell to be held in the first logic state does not exceed a third value set as an upper limit value of a variation of the first logic state. An over-program verify control function checks that a threshold voltage of the selected memory cell shifted to the second logic state does not exceed a fourth value set as an upper limit thereof.

Abstract: A non-volatile semiconductor memory device includes a memory cell array in which electrically erasable and programmable memory cells are arrayed, each of the memory cells storing therein a first logic state with a threshold voltage lower than or equal to a first value or a second logic state with a threshold voltage higher than or equal to a second value that is higher than the first value, a data hold circuit for holding program data and sensing data as read out of the memory cell array, and a controller configured to control a program sequence, wherein the controller has the control functions of: a program control function for applying a program voltage to a selected memory cell of the memory cell array to let the data shift from the first logic state to the second logic state; a program verify control function for verifying that the programmed data of the selected memory cell shifted to the second logic state; an erratic program verify control function for checking that the threshold voltage of a memory ce

Abstract: In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.

Abstract: In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.

Abstract: In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.