Patents by Inventor Mikito Otonari

Mikito Otonari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LAMINAR STRUCTURE ON A SEMICONDUCTOR SUBSTRATE
    Publication number: 20100096666
    Abstract: An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of ?-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline ?-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline ?-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.
    Type: Application
    Filed: December 12, 2007
    Publication date: April 22, 2010
    Applicant: National University Corporation Toyohashi University of Technology
    Inventors: Makoto Ishida, Kazuaki Sawada, Daisuke Akai, Mikinori Ito, Mikito Otonari, Kenro Kikuchi, Yiping Guo