Patents by Inventor Mikiya CHOUNABAYASHI

Mikiya CHOUNABAYASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide MOSFET inverter circuit
    Patent number: 10340817
    Abstract: The inverter circuit has a first silicon carbide MOSFET and a second silicon carbide MOSFET connected in series and external freewheel diodes respectively connected in anti-parallel to the first and second MOSFETs. The inverter circuit is configured such that during a deadtime when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF and freewheeling current starts flowing, a pulse width of a transient current flowing to a built-in diode of the first silicon carbide MOSFET or a built-in diode of the second silicon carbide MOSFET is less than 2 ?s.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: July 2, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Takumi Fujimoto, Mikiya Chounabayashi
  • SILICON CARBIDE MOSFET INVERTER CIRCUIT
    Publication number: 20190115850
    Abstract: The inverter circuit has a first silicon carbide MOSFET and a second silicon carbide MOSFET connected in series and external freewheel diodes respectively connected in anti-parallel to the first and second MOSFETs. The inverter circuit is configured such that during a deadtime when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF and freewheeling current starts flowing, a pulse width of a transient current flowing to a built-in diode of the first silicon carbide MOSFET or a built-in diode of the second silicon carbide MOSFET is less than 2 ?s.
    Type: Application
    Filed: September 7, 2018
    Publication date: April 18, 2019
    Applicant: Fuji Electric Co., Ltd.
    Inventors: Takumi FUJIMOTO, Mikiya Chounabayashi
  • SEMICONDUCTOR DEVICE
    Publication number: 20180174987
    Abstract: A semiconductor device is provided that includes a semiconductor chip having a main terminal and a control terminal, a main connection pin electrically connected to the main terminal, and a control connection pin electrically connected to the control terminal and having an electrical resistance higher than that of the main connection pin. The control connection pin may be a control internal connection pin or a control external connection pin. The control connection pin may include material having an electrical resistivity higher than that of material of the main connection pin. The control connection pin may have a shape different from that of the main connection pin.
    Type: Application
    Filed: October 26, 2017
    Publication date: June 21, 2018
    Inventors: Mikiya CHOUNABAYASHI, Ryohei MAKINO, Hayato NAKANO