Abstract: A method for producing methanol includes obtaining reformed gas by subjecting raw material gas containing methane to partial oxidation reforming by use of oxygen; reducing a CO/CO2 ratio in the reformed gas; and obtaining produced gas containing methanol from the reformed gas with the reduced CO/CO2 ratio by using any of a fixed-bed reactor and an isothermal reactor.

Abstract: A denitrator removes nitrogen oxide in a flue gas generated from a combustion furnace by injecting a reducing agent into the flue gas. The denitrator includes a housing disposed above the combustion furnace. The housing includes a discharge port for the flue gas at one end of the housing. A cross-sectional area of flow of the flue gas gradually increases toward the discharge port. The housing gathers and guides the flue gas to the discharge port. The denitrator injects the reducing agent in another end of the housing.

Abstract: A reforming device (10) according to the present invention has a compressor (11), a first heat exchanger (12), a desulfurization device (13), a reformer (14), a raw material gas branching line (L11) that extracts a compressed natural gas (21) from a downstream side of the desulfurization device (13) with respect to the flow direction of the natural gas (21) and supplies the natural gas (21) to the reformer (14), and a flue gas discharging line (L12) that discharges a flue gas (22) generated in the reformer (14), wherein the first heat exchanger (12) is provided in the flue gas discharging line (L12), and the flue gas (22) is used as a heating medium of the compressed natural gas (21).

Abstract: Included are an ammonia synthesis column that synthesizes ammonia from a raw material gas, a discharge line that discharges a synthetic gas, a water-cooled cooler that cools the synthetic gas with a coolant, disposed in the discharge line, an ammonia separator into which a synthetic gas after cooling is introduced and which separates the ammonia gas and a liquid ammonia from each other, a raw material return line that returns a raw material gas containing the separated ammonia gas to the ammonia synthesis column side as a return raw material gas, and a compressor that compresses the return raw material gas, disposed in the raw material return line. An ammonia concentration in the return raw material gas is 5 mol % or more, and an ammonia synthesis catalyst that synthesizes the ammonia gas in the ammonia synthesis column is a ruthenium catalyst.

Abstract: A denitrator removes nitrogen oxide in a flue gas generated from a combustion furnace by injecting a reducing agent into the flue gas. The denitrator includes a housing disposed above the combustion furnace. The housing includes a discharge port for the flue gas at one end of the housing. A cross-sectional area of flow of the flue gas gradually increases toward the discharge port. The housing gathers and guides the flue gas to the discharge port. The denitrator injects the reducing agent in another end of the housing.

Abstract: A method for producing methanol includes obtaining reformed gas by subjecting raw material gas containing methane to partial oxidation reforming by use of oxygen; reducing a CO/CO2 ratio in the reformed gas; and obtaining produced gas containing methanol from the reformed gas with the reduced CO/CO2 ratio by using any of a fixed-bed reactor and an isothermal reactor.

Abstract: Included are an ammonia synthesis column that synthesizes ammonia from a raw material gas, a discharge line that discharges a synthetic gas, a water-cooled cooler that cools the synthetic gas with a coolant, disposed in the discharge line, an ammonia separator into which a synthetic gas after cooling is introduced and which separates the ammonia gas and a liquid ammonia from each other, a raw material return line that returns a raw material gas containing the separated ammonia gas to the ammonia synthesis column side as a return raw material gas, and a compressor that compresses the return raw material gas, disposed in the raw material return line. An ammonia concentration in the return raw material gas is 5 mol % or more, and an ammonia synthesis catalyst that synthesizes the ammonia gas in the ammonia synthesis column is a ruthenium catalyst.

Abstract: A reforming device according to the present invention has a compressor, a first heat exchanger, a desulfurization device, a reformer, a raw material gas branching line that extracts a compressed natural gas from a downstream side of the desulfurization device with respect to the flow direction of the natural gas and supplies the natural gas to the reformer, and a flue gas discharging line that discharges a flue gas generated in the reformer, wherein the first heat exchanger is provided in the flue gas discharging line, and the flue gas is used as a heating medium of the compressed natural gas.

Abstract: A reforming device (10) according to the present invention has a compressor (11), a first heat exchanger (12), a desulfurization device (13), a reformer (14), a raw material gas branching line (L11) that extracts a compressed natural gas (21) from a downstream side of the desulfurization device (13) with respect to the flow direction of the natural gas (21) and supplies the natural gas (21) to the reformer (14), and a flue gas discharging line (L12) that discharges a flue gas (22) generated in the reformer (14), wherein the first heat exchanger (12) is provided in the flue gas discharging line (L12), and the flue gas (22) is used as a heating medium of the compressed natural gas (21).

Abstract: A reforming device according to the present invention has a compressor, a first heat exchanger, a desulfurization device, a reformer, a raw material gas branching line that extracts a compressed natural gas from a downstream side of the desulfurization device with respect to the flow direction of the natural gas and supplies the natural gas to the reformer, and a flue gas discharging line that discharges a flue gas generated in the reformer, wherein the first heat exchanger is provided in the flue gas discharging line, and the flue gas is used as a heating medium of the compressed natural gas.

Abstract: A wiring board having a favorable electrical reliability and in which a crack is unlikely to occur at a connection interface of via conductors even though the number of via conductors in series, which constitutes the stacked via, becomes larger than that of a conventional wiring board.

Abstract: An amine producing apparatus includes a reactor that reacts a mono-lower-alkylamine and an alkylene oxide, an unreacted-raw-material-recovery distillation column that separates unreacted raw materials by distillation from a product including unreacted raw materials obtained in the reactor, a non-aqueous distillation column that removes water and a light component by a distillation method from a reactive product from which unreacted raw material have been separated, and a purification and distillation column that separates by distillation a desired reactive product (mono-lower-alkylmonoalkanolamine) and residue (mono-lower-alkyldialkanolamine which is a dimer) from a reactive product from which the water and the light component have been removed.

Abstract: An amine producing apparatus includes a reactor that reacts a mono-lower-alkylamine and an alkylene oxide, an unreacted-raw-material-recovery distillation column that separates unreacted raw materials by distillation from a product including unreacted raw materials obtained in the reactor, a non-aqueous distillation column that removes water and a light component by a distillation method from a reactive product from which unreacted raw material have been separated, and a purification and distillation column that separates by distillation a desired reactive product (mono-lower-alkylmonoalkanolamine) and residue (mono-lower-alkyldialkanolamine which is a dimer) from a reactive product from which the water and the light component have been removed.

Abstract: A wiring substrate includes a lower insulating resin layer; wiring pattern layers provided on surfaces of the lower insulating resin layer; upper insulating resin layers; and via holes and via conductors connected electrically with at least one of the wiring pattern layers. An upper insulating resin layer includes an epoxy resin containing 30 to 50% by weight of an inorganic filler of SiO2 having an average grain diameter of 1.0 to 10.0 ?m, and a via having a lower end opening diameter of between 40 ?m and 60 ?m.

Abstract: A wiring board having a favorable electrical reliability and in which a crack is unlikely to occur at a connection interface of via conductors even though the number of via conductors in series, which constitutes the stacked via, becomes larger than that of a conventional wiring board.

Abstract: A generator for a vehicle includes a stator having an armature coil, a rotor having a field coil and a voltage regulator having a surge absorbing capacitor element and a heat sink. The heat sink dissipates heat that is transmitted to the capacitor element, so that temperature of the capacitor element can be kept low enough to prevent deterioration of the capacitor element.

Abstract: A process for manufacturing a wiring substrate, comprising: a step of forming an insulating resin layer containing an inorganic filler over a wiring layer formed on at least one surface of an insulating substrate; a step of forming a thin copper film layer by roughening a surface of the insulating resin layer and plating the same electrolessly with copper; a step of forming an insulating film over the thin copper film layer; a step of forming plated resists profiling a pattern by exposing and developing the insulating film with the pattern; and a step of forming wiring pattern layers by an electrolytic copper plating on a surface of the insulating resin layer having the plated resists formed thereon, wherein at least one of the plated resists has a width of less than 20 ?m, and the plated resists include adjoining plated resists in which a clearance between said adjoining plated resists has a width of less than 20 ?m.

Abstract: A generator for a vehicle includes a stator having an armature coil, a rotor having a field coil and a voltage regulator having a surge absorbing capacitor element and a heat sink. The heat sink dissipates heat that is transmitted to the capacitor element, so that temperature of the capacitor element can be kept low enough to prevent deterioration of the capacitor element.

Abstract: A process for manufacturing a wiring substrate, comprising: a step of forming an insulating resin layer containing an inorganic filler over a wiring layer formed on at least one surface of an insulating substrate; a step of forming a thin copper film layer by roughening a surface of the insulating resin layer and plating the same electrolessly with copper; a step of forming an insulating film over the thin copper film layer; a step of forming plated resists profiling a pattern by exposing and developing the insulating film with the pattern; and a step of forming wiring pattern layers by an electrolytic copper plating on a surface of the insulating resin layer having the plated resists formed thereon, wherein at least one of the plated resists has a width of less than 20 ?m, and -the plated resists include adjoining plated resists in which a clearance between said adjoining plated resists has a width of less than 20 ?m.

Abstract: A wiring substrate comprising: a lower insulating resin layer; wiring pattern layers provided on surfaces of the lower insulating resin layer; upper insulating resin layers provided on surfaces of the lower insulating resin layer and the wiring pattern layers; via holes extending through at least one of the upper insulating resin layers; and via conductors provided in the via holes and connected electrically with at least one of the wiring pattern layers, wherein at least one of the upper insulating resin layers contains an epoxy resin containing 30 to 50% by weigh of an inorganic filler of SiO2 having an average grain diameter of 1.0 to 10.0 ?m, and at least one of the via holes has a lower end opening diameter of 40 ?m or more and less than 60 ?m on a side of the wiring pattern layers.