Patents by Inventor Mikko Juntunen
Mikko Juntunen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11921071Abstract: The invention relates to a method for inspecting quality and/or condition of an elongated composite member, which is a load bearing member of a rope of a hoisting apparatus, such as an elevator, or a precursor of such a load bearing member, the method comprising providing an elongated composite member; and changing the temperature of said elongated composite member by heating or cooling said elongated composite member via a flank thereof; and scanning said elongated composite member from a lateral side thereof with a thermal imaging device after said changing of the temperature; and creating thermographic images of said elongated composite member.Type: GrantFiled: March 28, 2019Date of Patent: March 5, 2024Assignee: Kone CorporationInventors: Kim Antin, Sven Bossuyt, Antti Hassinen, Juha Helenius, Juha Honkanen, Mika Juntunen, Petri Kere, Mikko Lassila, Hannu Lehtinen, Aleksi Nareikko, Mikko Puranen, Kai Ruotsalainen, Petteri Valjus
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Publication number: 20230420585Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.Type: ApplicationFiled: September 7, 2023Publication date: December 28, 2023Applicant: ELFYS OYInventors: Antti HAARAHILTUNEN, Juha HEINONEN, Mikko JUNTUNEN, Chiara MODANESE, Toni PASANEN, Hele SAVIN, Ville VÄHÄNISSI
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Patent number: 11810987Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.Type: GrantFiled: May 26, 2020Date of Patent: November 7, 2023Assignee: ELFYS OYInventors: Antti Haarahiltunen, Juha Heinonen, Mikko Juntunen, Chiara Modanese, Toni Pasanen, Hele Savin, Ville Vähänissi
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Publication number: 20220216354Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.Type: ApplicationFiled: May 26, 2020Publication date: July 7, 2022Applicant: ELFYS OYInventors: Antti HAARAHILTUNEN, Juha HEINONEN, Mikko JUNTUNEN, Chiara MODANESE, Toni PASANEN, Hele SAVIN, Ville VÄHÄNISSI
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Patent number: 10950737Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.Type: GrantFiled: February 13, 2018Date of Patent: March 16, 2021Assignee: ELFYS OYInventors: Mikko Juntunen, Hele Savin, Ville Vähänissi, Päivikki Repo, Juha Heinonen
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Publication number: 20190386157Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.Type: ApplicationFiled: February 13, 2018Publication date: December 19, 2019Applicant: ELFYS OYInventors: Mikko JUNTUNEN, Hele SAVIN, Ville VÄHÄNISSI, Päivikki REPO, Juha HEINONEN
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Patent number: 9882070Abstract: A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.Type: GrantFiled: June 10, 2016Date of Patent: January 30, 2018Assignee: AALTO UNIVERSITY FOUNDATIONInventors: Mikko Juntunen, Hele Savin, Päivikki Repo, Ville Vähänissi, Antti Haarahiltunen
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Publication number: 20170358694Abstract: A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.Type: ApplicationFiled: June 10, 2016Publication date: December 14, 2017Applicant: Aalto University FoundationInventors: Mikko JUNTUNEN, Hele SAVIN, Päivikki REPO, Ville VÄHÄNISSI, Antti HAARAHILTUNEN
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Publication number: 20170012077Abstract: There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector.Type: ApplicationFiled: September 1, 2016Publication date: January 12, 2017Inventors: Fan Ji, Mikko Juntunen, liro Hietanen
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Patent number: 9437638Abstract: There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector.Type: GrantFiled: June 4, 2008Date of Patent: September 6, 2016Assignee: Detection Technology OyInventors: Fan Ji, Mikko Juntunen, Iiro Hietanen
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Patent number: 8405029Abstract: There is disclosed an imaging system comprising: a first integrated circuit including a photodiode array comprising a plurality of integrating photodiode elements formed in an array of rows and columns, the integrated circuit providing a plurality of output signals corresponding to an output of each photodiode; and a second integrated circuit for receiving as inputs the plurality of output signals from the first integrated circuit and including a plurality of multiplexers corresponding to the number of columns in the array, the outputs signals from a respective column forming inputs to a respective multiplexer, each multiplexer for selectively connecting one of the output signals to a multiplexer output, wherein each multiplexer is selectively switched between the plurality of output signals by a plurality of control lines, the number of control lines corresponding to the number of rows in the array.Type: GrantFiled: September 7, 2007Date of Patent: March 26, 2013Assignee: Detection Technology OyInventors: Mikko Juntunen, Iiro Hietanen
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Publication number: 20100200940Abstract: There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector.Type: ApplicationFiled: June 4, 2008Publication date: August 12, 2010Inventors: Fan Ji, Mikko Juntunen, Iiro Hietanen
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Publication number: 20100142782Abstract: There is disclosed an imaging system comprising: a first integrated circuit including a photodiode array comprising a plurality of integrating photodiode elements formed in an array of rows and columns, the integrated circuit providing a plurality of output signals corresponding to an output of each photodiode; and a second integrated circuit for receiving as inputs the plurality of output signals from the first integrated circuit and including a plurality of multiplexers corresponding to the number of columns in the array, the outputs signals from a respective column forming inputs to a respective multiplexer, each multiplexer for selectively connecting one of the output signals to a multiplexer output, wherein each multiplexer is selectively switched between the plurality of output signals by a plurality of control lines, the number of control lines corresponding to the number of rows in the array.Type: ApplicationFiled: September 7, 2007Publication date: June 10, 2010Applicant: DETECTION TECHNOLOGY OYInventors: Mikko Juntunen, Iiro Hietenen
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Patent number: 7375340Abstract: There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed of: a plurality of anodes formed at a first surface of at least one substrate; a corresponding plurality of cathodes formed at a second surface of at least one substrate; and an electrical interconnection between the plurality of anodes, whereby outputs of the array are provided by the plurality of cathodes, wherein a plurality of said sub-arrays of photo-detectors are placed adjacent to each other in a matrix to form the photo-detector array.Type: GrantFiled: August 12, 2003Date of Patent: May 20, 2008Assignee: Detection Technology OyInventors: Iiro Hietanen, Mikko Juntunen
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Publication number: 20060065841Abstract: There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed of: a plurality of anodes formed at a first surface of at least one substrate; a corresponding plurality of cathodes formed at a second surface of at least one substrate; and an electrical interconnection between the plurality of anodes, whereby outputs of the array are provided by the plurality of cathodes, wherein a plurality of said sub-arrays of photo-detectors are placed adjacent to each other in a matrix to form the photo-detector array.Type: ApplicationFiled: August 12, 2003Publication date: March 30, 2006Inventors: Iiro Hietanen, Mikko Juntunen