Abstract: This bolus, which is for radiation therapy, can be deformed to match the shape of a human body surface, and has little deformation during therapy. The bolus forming material is a rubber composition containing ethylene-propylene rubber and a temperature-sensitive material. The bolus forming material has a JIS type A hardness of 20 or higher at 30° C., and thus is not susceptible to deformation. The bolus forming material has a JIS type E hardness of 10 to 60 at 70° C., and thus easily deforms. The bolus forming material shifts the peak of the percentage depth dose for electron beams and X-rays in the beam source direction at 0.8 to 1.2 times the thickness thereof. Therefore, the bolus forming material has dose characteristics in the depth direction that are substantially the same as a human body. After a sheet of the bolus forming material is heated to around 70° C., the sheet deforms.

Abstract: A high frequency circuit module mounted on a first board that is a printed circuit board, includes: a second board; a high frequency circuit disposed on a first surface of the second board; a high frequency signal line disposed on the first surface of the second board, and extending from the high frequency circuit; and a matching member disposed on the first surface so as to cover at least a part of the high frequency signal line, and configured to adjust an impedance in the high frequency signal line. The matching member includes: a reference potential conductor separated from the high frequency signal line in a direction from a second surface, of the second board, opposite to the first surface, toward the first surface, the reference potential conductor being set at a reference potential; and a dielectric disposed between the reference potential conductor and the high frequency signal line.

Abstract: This power supply circuit is configured to supply power to an amplifier and includes: a power supply line extending by branching from a signal line through which a signal inputted to the amplifier is transferred or a signal outputted from the amplifier is transferred; and a capacitive element having one end connected to a distal end of the power supply line, and another end grounded, the capacitive element leading the signal to a ground, wherein a base end of the power supply line is a branch portion at which the power supply line branches from the signal line, and a line length of the power supply line extending from the branch portion to the distal end is shorter than ?/4, where ?, is a wavelength of the signal.

Abstract: A radio-frequency (RF) apparatus that reduces signal reflections at input and output terminals includes a semiconductor chip mounted on an assembly base upside down. The semiconductor chip includes first to third metal layers and a top metal layer that provides a top ground layer and a pad. The pad is connected to the input or output terminals on the assembly base and extracts a signal line and a stub line in the third metal layer. The semiconductor chip further includes an inner ground layer formed in the second metal layer. The inner ground layer and the signal line pulled out from the pad and formed in the third metal layer form a micro-strip line.

Abstract: A radio-frequency (RF) apparatus that reduces signal reflections at input and output terminals is disclosed. The RF apparatus includes an assembly base and a semiconductor chip mounted on the assembly base in upside down. The semiconductor chip includes first to third metal layers and a top metal layer that provides a top ground layer and a pad. The pad is connected to the input or output terminals on the assembly base and extracts a signal line and a stub line in the third metal layer, where lines are transferred to the first metal layer. The semiconductor chip further includes an inner ground layer formed in the second metal line. The inner ground layer and the signal line just pulled out from the pad and formed in the third metal layer form a micro-strip line.

Abstract: An electronic apparatus that includes a semiconductor device mounted on an assembly base is disclosed. The semiconductor device includes a transmission line, whose impedance is matched to characteristic impedance, and a pad connected to the transmission line, through which a high frequency signal is supplied to or extracted from the semiconductor device. The pad accompanies a stub line that is concurrently formed with the transmission line and grounded within the semiconductor device. The stub line operates as a short stub that may compensate parasitic capacitance attributed to the pad.

Abstract: An electronic apparatus that includes a semiconductor device mounted on an assembly base is disclosed. The semiconductor device includes a transmission line, whose impedance is matched to characteristic impedance, and a pad connected to the transmission line, through which a high frequency signal is supplied to or extracted from the semiconductor device. The pad accompanies a stub line that is concurrently formed with the transmission line and grounded within the semiconductor device. The stub line operates as a short stub that may compensate parasitic capacitance attributed to the pad.