Abstract: A tunnel magnetoresistive (TMR) sensing element may include a free layer. The free layer of the TMR sensing element may include a first cobalt iron boron (CoFeB) layer, an interlayer over the first CoFeB layer, a second CoFeB layer over the interlayer, and a nickel iron (NiFe) layer over the second CoFeB layer.

Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

Abstract: The present disclosure relates to a magnetic field sensor, in particular an angle sensor, including a magnetoresistive sensor component and a spin-orbit torque, SOT, sensor component.

Abstract: The described techniques facilitate the use of a magnetic field sensor that implements the same magnetic layer stack for the detection of the x, y, and z components of an external magnetic field. The sensor advantageously is insensitive to orthogonal stray fields and operates with a reduced offset compared to conventional magnetic field sensors. The linear regime implemented by the sensor to facilitate magnetic field detection may also be adjusted per application by tuning the current strength.