Abstract: A method and system for depositing a thin film on a substrate. In the system a target material is deposited and reacted on a substrate surface to form a substantially non-absorbing thin film. The volume of non-absorbing thin film formed per unit of time may be increased by increasing the area of the surface by a factor of “x” and increasing the rate of deposition of the target material by a factor greater than the inverse of the factor “x” to thereby increase the rate of formation of the volume of non-absorbing thin film per unit of time.

Abstract: A halogen incandescent burner comprising a quartz body comprising a light emitting chamber, a filament positioned within the light emitting chamber, and a multilayer optical coating on at least a portion of the chamber. The coating may include a plurality of layers of a low refractive index material and a high refractive index material having a total thickness of at least nine microns, wherein the gain of the burner is at least 1.7. The high refractive index material may comprise tantala and the low refractive index material may comprise silica.

Abstract: A lamp burner having a quartz body comprising a light emitting chamber intermediate a pair of end portions. A filament may be positioned within the light emitting chamber and a multilayer optical coating provided on at least a portion of the body. The coating may comprise a plurality of layers of a first material comprising silica, a plurality of layers of a second material comprising rutile titanium dioxide, and a plurality of layers of a third material having an index of refraction intermediate the indices of refraction of the layers of first material and the layers of second material.

Abstract: A method and system for depositing a thin film on a substrate. In the system a target material is deposited and reacted on a substrate surface to form a substantially non-absorbing thin film. The volume of non-absorbing thin film formed per unit of time may be increased by increasing the area of the surface by a factor of “x” and increasing the rate of deposition of the target material by a factor greater than the inverse of the factor “x” to thereby increase the rate of formation of the volume of non-absorbing thin film per unit of time.

Abstract: An apparatus and process for forming thin films of titanium dioxide in the rutile phase by reactive sputter deposition. In one aspect, a sputtering target and auxiliary plasma generator are positioned in a coating station in a sputtering chamber so that the titanium deposited on a substrate passing through the coating chamber is oxidized by exposure to the auxiliary plasma generated by the plasma generator commingled with the sputter plasma. The plasma may include monatomic oxygen to assist in the formation of rutile titanium dioxide. The target, or a pair of targets may also be operated from pulsed d.c. or a.c. power supplies.