Abstract: Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.

Abstract: A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.

Abstract: A system and method for context driven centralized help is provided. A daemon application initiated on a workstation or mobile device is configured to intercept a help request received in connection with an active application when a pre-defined triggering event is invoked. The daemon application captures context corresponding to the current page or function in use with the active application and generates a corresponding information dataset pertaining to the captured context. The information dataset is transmitted to a remote site, configured to query a content database, to determine if help-related content has been previously associated with the captured context, wherein a positive determination of the existence of such an association results in the help-related content being retrieved and displayed on the workstation or mobile device.

Abstract: A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally conductive inner wall having an interior surface at least partially defining an interior space adapted to receive the plurality of heated silicon rods therein. A thermal radiation shield is in the interior space generally adjacent to and in opposing relationship with the interior surface of the inner wall. The thermal radiation shield is substantially opaque to thermal radiation emitted from the plurality of heated silicon rods in the interior space of the bell jar.

Abstract: Determining an active/standby state for an interface unit includes determining an entity active/standby state for each entity of one or more entities of the interface unit. If each entity active/standby state is standby, then an aggregated active/standby state of the interface unit is established to be standby.

Abstract: A method for automatically attempting to recover equipment from a transient fault includes detecting a fault associated with the equipment in a node in a communications network, determining whether the fault associated with the equipment is transient, if the fault is transient automatically attempting to recover the equipment from the transient fault without user intervention, if the recovery attempt is successful monitoring the equipment for a pre-determined period of time to determine if the fault recurs, and if the fault recurs automatically re-attempting to recover the equipment from the fault until the fault does not recur in the pre-determined period of time or until a pre-determined number of attempts to recover the equipment have been performed.

Abstract: Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.

Abstract: Determining an active/standby state of one or more modules of a network element includes provisioning a path through the modules, where the path is for providing a service. A signal is introduced into the path, and the path is monitored. The service is established to be ready in accordance with the monitoring. The modules are determined to be in an active state in response to establishing that the service is ready.

Abstract: Determining an active/standby state for an interface unit includes determining an entity active/standby state for each entity of one or more entities of the interface unit. If each entity active/standby state is standby, then an aggregated active/standby state of the interface unit is established to be standby.

Abstract: A method for automatically attempting to recover equipment from a transient fault includes detecting a fault associated with the equipment in a node in a communications network, determining whether the fault associated with the equipment is transient, if the fault is transient automatically attempting to recover the equipment from the transient fault without user intervention, if the recovery attempt is successful monitoring the equipment for a pre-determined period of time to determine if the fault recurs, and if the fault recurs automatically re-attempting to recover the equipment from the fault until the fault does not recur in the pre-determined period of time or until a pre-determined number of attempts to recover the equipment have been performed.

Abstract: Methods and apparatus for performing optimizations for a mobile network device such as a Mobile Node or Mobile Router supporting multiple links to a Home Agent (or Correspondent Node in a Mobile IPv6 environment) are disclosed. During the registration process, link characteristics are transmitted in the registration request. From the link characteristics, it is possible to determine whether the mobile network device has roamed from a high to a low bandwidth link, or vice versa. A first set of optimizations may be performed when the mobile network device has roamed from a high to a low bandwidth link, while a second set of optimizations may be performed when the mobile network device has roamed from a low to a high bandwidth link. Some optimizations may be performed during the establishment of a TCP session, while others may be performed during or upon completion of the Mobile IP registration process.

Abstract: A system and method for slicing an ingot into wafers using the wire saw process. A slurry collection system collects and supplies slurry to a slurry handling system for controlling temperatures and/or flow rates of the slurry thereby providing slurry output at a controlled temperature and/or a controlled flow rate to slicing system for cutting the ingot, which may be preheated.

Abstract: An electronic data processing circuit contains a plurality of data handling units (10a-d, 16a-b) with data outputs, at least part of the data handling units having address outputs. The data handling units supply words of preferably selectable size to a bus. A bus controller (20) is arranged to control access to the bus in successive access cycles. The bus controller (20) causes data bits from a plurality of data words from respective ones of the data handling units (10a-d, 16a-b), to be placed in combination on the data lines in a same bus cycle. The bus controller causes write addresses that the respective ones of the data handling units (10a-d, 16a-b) supply for respective ones of the plurality of data words to be placed on the address lines in a plurality of respective bus cycles. Preferably, the temporal or spatial arrangement of the data words on the bus lines adapted so as to minimize the number of logic level changes on the bus.

Abstract: A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.

Abstract: A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 ?·cm.

Abstract: Methods and apparatus for establishing communication between a Mobile Node and a Home Agent are disclosed. The Home Agent receives a registration request packet from the Mobile Node, the registration request packet including an IP source address and a Home Agent address. The Home Agent then detects from the registration request packet when network address translation has been performed. When it has been detected that network address translation has been performed, a tunnel is set up between the Home Agent address and the IP source address.

Abstract: The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.

Abstract: A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.

Abstract: A silicon wafer having a controlled oxygen precipitation behavior such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic gettering purposes are ultimately formed. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing such as an epitaxial deposition process while maintaining the ability to dissolve any grown-in nucleation centers.

Abstract: A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.