Patents by Inventor Milton Beachy

Milton Beachy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stringer elimination in a BiCMOS process
    Patent number: 7700491
    Abstract: A method of preventing formation of stringers adjacent a side of a CMOS gate stack during the deposition of mask and poly layers for the formation of a base and emitter of a bi-polar device on a CMOS integrated circuit wafer. The stringers are formed by incomplete removal of a hard mask layer over an emitter poly layer over a nitride mask layer. The method includes overetching the hard mask layer with a first etchant having a higher selectivity for the emitter poly material than for the material of the hard mask, determining an end point for the overetching step by detection of nitride in the etchant and applying a poly etchant that is selective with respect to nitride to remove any residual emitter poly.
    Type: Grant
    Filed: August 10, 2005
    Date of Patent: April 20, 2010
    Assignee: Agere Systems Inc.
    Inventors: Milton Beachy, Thomas Craig Esry, Daniel Charles Kerr, Thomas M. Oberdick, Mario Pita
  • Stringer elimination in a BiCMOS process
    Publication number: 20070037395
    Abstract: A method of preventing formation of stringers adjacent a side of a CMOS gate stack during the deposition of mask and poly layers for the formation of a base and emitter of a bi-polar device on a CMOS integrated circuit wafer. The stringers are formed by incomplete removal of a hard mask layer over an emitter poly layer over a nitride mask layer. The method includes overetching the hard mask layer with a first etchant having a higher selectivity for the emitter poly material than for the material of the hard mask, determining an end point for the overetching step by detection of nitride in the etchant and applying a poly etchant that is selective with respect to nitride to remove any residual emitter poly.
    Type: Application
    Filed: August 10, 2005
    Publication date: February 15, 2007
    Inventors: Milton Beachy, Thomas Esry, Daniel Kerr, Thomas Oberdick, Mario Pita
  • Method for controlling trench depth in shallow trench isolation features
    Patent number: 7087498
    Abstract: A method for forming a trench in a semiconductor silicon substrate. An anti-reflective coating layer and a photoresist layer are formed over the substrate and patterned in accordance with a location for the trench. During the trench etch into the silicon substrate, the etch environment is monitored to detect the material of the anti-reflective coating layer. The etch process is controlled in response to detecting the removal of this material and the known etch rate differential between the anti-reflective coating material layer and the silicon substrate.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: August 8, 2006
    Assignee: Agere Systems Inc.
    Inventors: Mario Pita, Milton Beachy, Gerald W. Gibson, Jr.
  • Method for controlling trench depth in shallow trench isolation features
    Publication number: 20050070112
    Abstract: A method for forming a trench in a semiconductor silicon substrate. An anti-reflective coating layer and a photoresist layer are formed over the substrate and patterned in accordance with a location for the trench. During the trench etch into the silicon substrate, the etch environment is monitored to detect the material of the anti-reflective coating layer. The etch process is controlled in response to detecting the removal of this material and the known etch rate differential between the anti-reflective coating material layer and the silicon substrate.
    Type: Application
    Filed: September 30, 2003
    Publication date: March 31, 2005
    Inventors: Mario Pita, Milton Beachy, Gerald Gibson