Patents by Inventor Milton Birnbaum
Milton Birnbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7324568Abstract: A modulated saturable absorber controlled laser. The laser includes an active medium; a saturable absorber material operationally coupled to the medium to serve as a passive Q switch; and an energy source disposed external to the medium for apply energy to the absorber. In particular embodiments, the energy source is a diode laser and focusing optics are included between the diode laser and the absorber. Modulation of the gain at the photon round trip time in the laser resonator causes a mode-locked laser output. A dichroic beamsplitter is included in this embodiment for directing energy to the absorber. In an alternative embodiment, the diode laser is a quasi-monolithic diode laser assembly ring.Type: GrantFiled: April 8, 2004Date of Patent: January 29, 2008Assignee: Raytheon CompanyInventors: Kalin Spariosu, Milton Birnbaum
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Patent number: 7046710Abstract: A solid-state eye-safe laser and method with gain boost by dual-wavelength, synchronized pumplights. The laser includes a medium doped with ions that emit light at a laser wavelength as a result of the transition of electron energy from an upper energy level manifold to a lower energy level manifold. A first pumplight couples energy into the medium at a first wavelength that excites a first portion of the ions into said upper energy level manifold. A second pumplight couples energy into said medium at a second wavelength that excites a second portion of the ions to a third energy level manifold. A fraction of the ions relax to the upper energy level manifold and thereby increase the gain of the laser (2). The laser may be an erbium crystal laser, using yttrium-aluminum-garnet operating near 1640 nanometers.Type: GrantFiled: August 28, 2003Date of Patent: May 16, 2006Assignee: Raytheon CompanyInventors: Kalin Spariosu, Milton Birnbaum
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Publication number: 20050226280Abstract: A modulated saturable absorber controlled laser. The laser includes an active medium; a saturable absorber material operationally coupled to the medium to serve as a passive Q switch; and an energy source disposed external to the medium for apply energy to the absorber. In particular embodiments, the energy source is a diode laser and focusing optics are included between the diode laser and the absorber. Modulation of the gain at the photon round trip time in the laser resonator causes a mode-locked laser output. A dichroic beamsplitter is included in this embodiment for directing energy to the absorber. In an alternative embodiment, the diode laser is a quasi-monolithic diode laser assembly ring.Type: ApplicationFiled: April 8, 2004Publication date: October 13, 2005Inventors: Kalin Spariosu, Milton Birnbaum
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Patent number: 6891878Abstract: An inherently efficient direct eye-safe laser based on Er:Crystal technology utilizing intra-cavity energy conversion. The Er:Crystal laser is intra-cavity pumped by a highly efficient ytterbium or neodymium crystal laser, which is in-turn, pumped by conventional infrared diodes array bars. The laser is inherently compact and low-cost allowing for significant scaling of the output energy and power with greatly reduced number of required diode pump sources. This intra-cavity pump scheme of appropriate Er:Crystals also provides for efficient generation of ultra-short Q-switched pulse operation of such lasers.Type: GrantFiled: May 1, 2003Date of Patent: May 10, 2005Assignee: Raytheon CompanyInventors: Kalin Spariosu, Milton Birnbaum
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Publication number: 20050047466Abstract: A solid-state eye-safe laser and method with gain boost by dual-wavelength, synchronized pumplights. The laser includes a medium doped with ions that emit light at a laser wavelength as a result of the transition of electron energy from an upper energy level manifold to a lower energy level manifold. A first pumplight couples energy into the medium at a first wavelength that excites a first portion of the ions into said upper energy level manifold. A second pumplight couples energy into said medium at a second wavelength that excites a second portion of the ions to a third energy level manifold. A fraction of the ions relax to the upper energy level manifold and thereby increase the gain of the laser (2). The laser may be an erbium crystal laser, using yttrium-aluminum-garnet operating near 1640 nanometers.Type: ApplicationFiled: August 28, 2003Publication date: March 3, 2005Inventors: Kalin Spariosu, Milton Birnbaum
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Publication number: 20040218652Abstract: An inherently efficient direct eye-safe laser based on Er:Crystal technology utilizing intra-cavity energy conversion. The Er:Crystal laser is intra-cavity pumped by a highly efficient ytterbium or neodymium crystal laser, which is in-turn, pumped by conventional infrared diodes array bars. The laser is inherently compact and low-cost allowing for significant scaling of the output energy and power with greatly reduced number of required diode pump sources. This intra-cavity pump scheme of appropriate Er:Crystals also provides for efficient generation of ultra-short Q-switched pulse operation of such lasers.Type: ApplicationFiled: May 1, 2003Publication date: November 4, 2004Applicant: RAYTHEON COMPANYInventors: Kalin Spariosu, Milton Birnbaum
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Patent number: 5832008Abstract: An eyesafe laser system includes a Q-switch crystal formed of a semiconductor host material having noncentrosymmetric tetrahedral substitutional sites doped with transition metal ions in concentrations from about 0.001 to about 0.10 atomic percent, which functions as to be a saturable absorber of light at eyesafe wavelengths with a relatively long relaxation lifetime. Co.sup.2+ :ZnSe has been demonstrated to have advantageously high absorption cross section and advantageously high relaxation lifetime at both 1.54 .mu.m (Er:glass laser) and 1.6 .mu.m (Er:YAG laser). Other candidate host materials include other zinc chalcogenides, cadmium chalcogenides and zinc oxide.Type: GrantFiled: January 24, 1997Date of Patent: November 3, 1998Assignee: Hughes ElectronicsInventors: Milton Birnbaum, Robert D. Stultz, Marly B. Camargo
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Patent number: 5802083Abstract: A laser system includes a laser resonator cavity having a resonant axis and a lasing element within the laser resonator cavity. The lasing element emits, under stimulation, light at a wavelength of from about 1.6 to about 2.3 micrometers. There is a flash lamp, laser diodes or other pumping devices, which optically pump the lasing element to emit laser light. A Q-switch crystal lies along the resonant axis within the laser resonator cavity. The Q-switch crystal is formed of a host material having a concentration of Ho.sup.3+ ions therein, so as to be a saturable absorber of light of a wavelength of about 2.0-2.1 micrometers. The Q-switch crystal is preferably Ho.sup.3+ -doped yttriumlithium-fluoride, or Ho.sup.3+ -doped yttrium-vanadate. In another embodiment, the Q-switch crystal is preferably Cr.sup.2+ :fosterite (Mg.sub.2 SiO.sub.4).Type: GrantFiled: December 11, 1995Date of Patent: September 1, 1998Assignee: Milton BirnbaumInventor: Milton Birnbaum
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Patent number: 5724372Abstract: A laser system includes a laser resonator cavity having a resonant path and an Er,Yb:glass lasing element with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity. A diode array optically pumps the lasing element to emit light. A Q-switch lies along the resonant path within the laser resonator cavity. The Q-switch is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element. The Q-switch is preferably a uranium-doped fluoride such as U:CaF.sub.2, U:SrF.sub.2, or U:BaF.sub.2.Type: GrantFiled: January 22, 1996Date of Patent: March 3, 1998Assignee: Hughes ElectronicsInventors: Robert D. Stultz, David S. Sumida, Milton Birnbaum
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Patent number: 5654973Abstract: A laser system includes a laser resonator cavity having a resonant axis and a lasing element within the laser resonator cavity. The lasing element emits, under stimulation, light at a wavelength of from about 0.95 to about 1.65 micrometers. There is a flash lamp which optically pumps the lasing element to emit light. A Q-switch crystal lies along the resonant axis within the laser resonator cavity. The Q-switch crystal is formed of a host material having a concentration of Co.sup.2+ ions therein, so as to be a saturable absorber of light of a wavelength of from about 0.95 to about 1.65 micrometers. The Q-switch crystal is preferably Co.sup.2+ -doped yttrium-scandium-gallium garnet or Co.sup.2+ -doped yttrium-aluminum garnet.Type: GrantFiled: May 5, 1995Date of Patent: August 5, 1997Assignee: Hughes ElectronicsInventors: Robert D. Stultz, Milton Birnbaum, Marly B. Camargo, Milan Kokta
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Patent number: 5652756Abstract: A glass fiber laser system includes a laser resonator cavity having a resonant path and an erbium-doped glass fiber lasing element with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity. A light source directed into an input end of the glass fiber lasing element optically pumps the lasing element to emit light. A passive Q-switch lies along the resonant path within the laser resonator cavity. The Q-switch is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element. The Q-switch is preferably a uranium-doped fluoride crystal such as U:CaF.sub.2, U:SrF.sub.2, or U:BaF.sub.2.Type: GrantFiled: January 22, 1996Date of Patent: July 29, 1997Assignee: Hughes ElectronicsInventors: Robert D. Stultz, Hans W. Bruesselbach, David S. Sumida, Milton Birnbaum, Marly B. Camargo
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Patent number: 5557624Abstract: A laser system includes a laser resonator cavity having a resonant axis and an Er:glass, Er:YAG, or other lasing element with an output of from about 1.4 to about 1.65 micrometers within the laser resonator cavity. A flash lamp optically pumps the lasing element to emit light. A Q-switch crystal lies along the resonant axis within the laser resonator cavity. The Q-switch crystal is formed of a host material having a concentration of U.sup.2+ ions therein, so as to be a saturable absorber of the light emitted by the lasing element. The Q-switch crystal is preferably a U.sup.2+ -doped fluoride such as U:CaF.sub.2, U:SrF.sub.2, or U:BaF.sub.2.Type: GrantFiled: January 20, 1995Date of Patent: September 17, 1996Assignee: Hughes Aircraft CompanyInventors: Robert D. Stultz, Milton Birnbaum, Marly B. Camargo
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Patent number: 4669831Abstract: A total internal reflection modulator/deflector assembly for use with a focused beam of polarized incident laser light. The application of a low direct current voltage (e.g., less than 50 volts) to a pair of identical stacked crystals exhibiting the Pockel's effect produces an index of refraction difference at their interface. Since the index changes are small, the incidence angle of the impinging polarized laser light is large, e.g., 89 degrees. In the preferred embodiment, one crystal is rotated relative to the other, such that the applied electric field causes index changes of +.DELTA.n in one crystal and of -.DELTA.n in the other crystal. As a result, the impinging polarized laser light is divided into two portions, one of which is totally internal reflected, and transmitted in the desired modulated conditions.Type: GrantFiled: April 22, 1985Date of Patent: June 2, 1987Assignee: The United States of America as represented by the Secretary of the Air ForceInventors: Milton Birnbaum, Armin W. Tucker, deceased