Abstract: A coating system characterized by a high degree of absorption of infrared energy and composed of a thin first layer of aluminum oxide, a thin, semitransparent second layer of titanium, a third dielectric layer of aluminum oxide and an opaque fourth layer of titanium.

Abstract: Disclosed is a novel photoconductive array suitable for use as an infrared detector, and a novel process for fabricating same. In this process, a chosen metallization pattern is disposited on the surface of an insulating substrate, and thereafter the metallization pattern is either covered or partially covered with a layer of selected photoconductive material, such as lead selenide or lead sulfide. The photoconductive material is formed into a predetermined pattern which is accomplished using conventional photoetch techniques. Then, a suitable photoresist mask is deposited at a selected location on the surface of the photoconductive layer in preparation for an electroplating step. In this electroplating step, a surface contact metallization for the photoconductor is plated on both the previously deposited photoconductive and metal surfaces which are not masked by the photoresist.