Patents by Inventor Milton Y. Yeh

Milton Y. Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 7449630
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: April 6, 2005
    Date of Patent: November 11, 2008
    Assignee: Emcore Corporation
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Semiconductor body forming a solar cell with a bypass diode
    Patent number: 7115811
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: January 3, 2003
    Date of Patent: October 3, 2006
    Assignee: EMCORE Corporation
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. IIes
  • Solar cell having an integral monolithically grown bypass diode
    Publication number: 20040040593
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: January 3, 2003
    Publication date: March 4, 2004
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 6600100
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: July 29, 2003
    Assignee: Emcore Corporation
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass
    Publication number: 20020179141
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: August 21, 2001
    Publication date: December 5, 2002
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 6359210
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: January 2, 2001
    Date of Patent: March 19, 2002
    Assignee: Tecstar Power System, Inc.
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Publication number: 20010027805
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Application
    Filed: January 2, 2001
    Publication date: October 11, 2001
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • Solar cell having an integral monolithically grown bypass diode
    Patent number: 6278054
    Abstract: The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: August 21, 2001
    Assignee: Tecstar Power Systems, Inc.
    Inventors: Frank Ho, Milton Y. Yeh, Chaw-Long Chu, Peter A. Iles
  • High efficiency multi-junction solar cell
    Patent number: 5405453
    Abstract: A high efficiency solar cell comprises: (a) a germanium substrate having a front surface and a back surface; (b) a back-metal contact on the back surface of the germanium substrate; (c) a first semiconductor cell comprising (1) a GaAs p-n junction formed from an n-GaAs and a p-GaAs layer, the n-GaAs layer formed on the front surface of the n-germanium substrate, and (2) a p-(Al,Ga)As window layer, the p-(Al,Ga)As window layer formed on the p-GaAs layer; (d) a tunnel diode comprising a GaAs p.sup.+ -n.sup.+ junction formed from a p.sup.+ -GaAs layer and an n.sup.+ -GaAs layer, the p.sup.+ -GaAs layer formed on the p-(Al,Ga)As window layer; and (e) a second semiconductor cell comprising (1) a (Ga,In)P p-n junction formed from an n-(Ga,In)P layer and a p-(Ga,In)P layer, the n(Ga,In)P layer formed on the n.sup.
    Type: Grant
    Filed: November 8, 1993
    Date of Patent: April 11, 1995
    Assignee: Applied Solar Energy Corporation
    Inventors: Frank F. Ho, Milton Y. Yeh
  • High efficiency solar cell
    Patent number: 4915744
    Abstract: A gallium-arsenide solar cell has a germanium substrate cut at a special angle, with its surface generally perpendicular to the 001 axis, but tilted by about six to fifteen degrees toward the direction generally about half-way between the 011 and the 111 axial directions. To avoid the cascade effect the junction with the substrate may be passivated or photovoltaically inhibited by initiating vapor deposition of GaAs at a temperature below 700.degree. C. and rapidly ramping the temperature up to normal vapor deposition temperatures. Poisoning of the GaAs layer by germanium may be prevented inexpensively by using a silicon dioxide coating on one side of the germanium substrate.
    Type: Grant
    Filed: February 3, 1989
    Date of Patent: April 10, 1990
    Assignee: Applied Solar Energy Corporation
    Inventors: Frank F. Ho, Milton Y. Yeh