Patents by Inventor Mimi X. Qian

Mimi X. Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9318373
    Abstract: A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: April 19, 2016
    Assignee: CYPRESS SEMICONDUCTOR CORPORATION
    Inventors: David M Rogers, Mimi X Qian, Kwadwo A Appiah, Mark Randolph, Michael A VanBuskirk, Tazrien Kamal, Hiroyuki Kinoshita, Yi He, Wei Zheng
  • Publication number: 20130237022
    Abstract: A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
    Type: Application
    Filed: April 19, 2013
    Publication date: September 12, 2013
    Applicant: SPANSION LLC
    Inventors: David M Rogers, Mimi X Qian, Kwadwo A Appiah, Mark Randolph, Michael A VanBuskirk, Tazrien Kamal, Hiroyuki Kinoshita, Yi HE, Wei Zheng
  • Patent number: 8445966
    Abstract: A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: May 21, 2013
    Assignee: Spansion LLC
    Inventors: David M. Rogers, Mimi X. Qian, Kwadwo A. Appiah, Mark Randolph, Michael A. VanBuskirk, Tazrien Kamal, Hiroyuki Kinoshita, Yi He, Wei Zheng
  • Publication number: 20080151590
    Abstract: A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
    Type: Application
    Filed: December 20, 2006
    Publication date: June 26, 2008
    Inventors: David M. Rogers, Mimi X. Qian, Kwadwo A. Appiah, Mark Randolph, Michael A. VanBuskirk, Tazrien Kamal, Hiroyuki Kinoshita, Yi He, Wei Zheng