Abstract: A method of fabricating an interconnection structure according to an embodiment of the present invention, includes patterning a dielectric layer to form a first recession region, including a first nest-shaped recession region having a first width and a first line-shaped recession region having a second width, which is less than the first width. A guide spacer layer is formed on sidewalls of the first recession region to provide a second recession region including a second nest-shaped recession region in the first nest-shaped recession region. A self-assembling block copolymer material is formed to fill the second nest-shaped recession region. The self-assembling block copolymer material is annealed to form a polymer block domain and a polymer block matrix, surrounding the polymer block domain. The polymer block domain is removed to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is etched to form a via cavity.

Abstract: A method of fabricating an interconnection structure according to an embodiment of the present invention, includes patterning a dielectric layer to form a first recession region, including a first nest-shaped recession region having a first width and a first line-shaped recession region having a second width, which is less than the first width. A guide spacer layer is formed on sidewalls of the first recession region to provide a second recession region including a second nest-shaped recession region in the first nest-shaped recession region. A self-assembling block copolymer material is formed to fill the second nest-shaped recession region. The self-assembling block copolymer material is annealed to form a polymer block domain and a polymer block matrix, surrounding the polymer block domain. The polymer block domain is removed to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is etched to form a via cavity.

Abstract: A method for fabricating fine patterns includes forming a first photomask including first line patterns and first assist features and forming a second photomask including second line patterns extending to a portion corresponding to the first assist features in a direction perpendicular to the first line patterns. A first resist layer may be exposed through a first exposure process by using the first photomask, and a first resist pattern formed to open regions following the shape of the first line patterns. The first resist pattern may be frozen and a second resist layer may be formed to fill the opened regions of the first resist pattern. The second resist layer may be exposed through a second exposure process by using the second photomask, and a second resist pattern formed to open regions corresponding to the intersections between the first and second line patterns with the first resist pattern.