Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a metal-oxide-semiconductor (MOS) transistor, and a dielectric layer. The MOS transistor includes a gate structure formed over the substrate. The dielectric layer is formed aside the gate structure, and the dielectric layer is doped with a strain modulator. An effective lattice constant of the dielectric layer doped with the strain modulator is different from an original lattice constant of the dielectric layer prior to be doped with the strain modulator, wherein the strain modulator at least comprises silicon.

Abstract: A battery includes a housing which is bendable. The housing includes a number of cells spaced apart from each other within the housing. The housing further includes a current collecting unit arranged within the housing and configured to electrically couple the number of cells together.

Abstract: A method for treating Alzheimer's disease and a method for downregulating protein aggregation in brain are disclosed, which respectively comprises: administering a zinc finger-like peptide to a subject in need thereof, wherein the zinc finger-like peptide comprises an amino acid sequence of RRSSSCK (SEQ ID NO: 1).

Abstract: A synchronization method, suitable between a first electronic device and a second electronic device, includes following operations. A first pulse of a wireless signal sent from the first electronic device is received by the second electronic device. A first status of the second electronic device is determined. A second pulse of the wireless signal is received after the first pulse. A receiving time gap between the first pulse being received and the second pulse being received by the second electronic device is measured. A new status of the second electronic device is determined according to the receiving time gap and the first status of the second electronic device. Whether to synchronize a system clock on the second electronic device with the second pulse of the wireless signal is determined according to the new status.

Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. An input sound signal related to listener data and sound source data is received. An encoding process is performed by multiplying the input sound signal by an encoding function matrix having entries related to a basis function to generate an encoding result. A decoding function matrix is retrieved from the storage and at least one direction parameter is applied to the decoding function matrix, wherein the decoding function matrix compensates a difference between an ideal approximation result and a modeled approximation result of the input sound signal. A decoding process is performed by multiplying the encoding result by the decoding function matrix having the direction parameter applied to generate an output sound signal. The output sound signal is reproduced.

Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. A sound signal is generated with a 3D sound generating process according to listener data and sound data. Pre-recorded sound data is retrieved to further generate a target distance function corresponding to the sound distance. A fixed head-related transfer function corresponding to a fixed distance is retrieved. A target head-related transfer function corresponding to the sound distance is generated by adapting the target distance function to the fixed head-related transfer function. The sound signal is reproduced by multiplying the sound signal by the target head-related transfer function.

Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. A sound signal with a three-dimensional (3D) sound generating process is generated according to listener data and sound data. Whether a sound source position is within a target region relative to a listener position within a virtual environment is determined according to the listener data and the sound data. The sound signal is multiplied by an adjusting function to enhance peaks and valleys of the sound signal while maintaining a behavior of the sound signal when the sound source position is within the target region. The sound signal is reproduced.

Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.

Abstract: A method for obtaining Hi-Res audio transfer information is provided. The method is applicable to the electronic device having a processor. In the method, a first audio signal is captured and converted from the time domain into in the frequency domain to generate a first signal spectrum. Then, a regression analysis is performed on an energy distribution of the first signal spectrum to predict an extended energy distribution according to the first signal spectrum, and head-related parameters are used to compensate for the extended energy distribution to generate an extended signal spectrum. Finally, the first signal spectrum and the extended signal spectrum are combined into a second signal spectrum which is converted from the frequency domain into the time domain to generate a second audio signal including Hi-Res audio transfer information.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first fin structure and a second fin structure over a semiconductor substrate, and forming a mask layer covering the first fin structure and the second fin structure. The method also includes performing a first etching operation using the second fin structure as an etch stop layer to partially remove the mask layer such that the etch stop layer protrudes from the mask layer after the first etching operation. The method further includes partially removing the second fin structure using a second etching operation after the first etching operation.

Abstract: A sound-reproducing method that includes the steps outlined below is provided. A playback sound is generated by applying original audio into a test environment. The playback sound is received to generate received sound data. At least one test environment spatial parameter corresponding to the test environment is calculated according to known audio data related to the original audio and the received sound data. Input audio is modified by applying the test environment spatial parameter thereto to generate reproduced audio.

Abstract: A 3D reconstruction method is provided. Positioning signals are received by a signal receiver at a first and a second time spots to determine a HMD displacement vector and a HMD rotation amount. A first and a second images are retrieved by a first camera to determine a first camera rotation amount. A relative rotation amount and a relative displacement vector between the HMD and the first camera are calculated. A first camera displacement vector of the first camera is calculated according to the HMD displacement vector, the HMD rotation amount, the relative rotation amount and the relative displacement vector. Depth information of the first and the second image is obtained based on the first camera displacement vector and the first camera rotation amount. 3D reconstruction is performed according to images retrieved by the first camera and the depth information.

Abstract: A sound-reproducing method that includes the steps outlined below is provided. A playback sound is generated by applying original audio into a test environment. The playback sound is received to generate received sound data. At least one test environment spatial parameter corresponding to the test environment is calculated according to known audio data related to the original audio and the received sound data. Input audio is modified by applying the test environment spatial parameter thereto to generate reproduced audio.

Abstract: A wearable device includes a frame and a display element is provided. The frame internally includes a sliding element. The display element is attached to the sliding element and can slide on the sliding element to be brought in front of the wearer's eye or away from the wearer's eye.

Abstract: An echo-cancelling device includes an audio input/output (I/O) terminal, an audio-receiving module, an analog-to-digital (A/D) converter, and a processor is provided. The A/D converter is electrically connected to the audio-receiving module. The processor is electrically connected to the A/D converter and the audio I/O terminal. The audio I/O terminal receives an external reference signal from an electronic device. The audio-receiving module receives an input audio and an output audio from the electronic device, and generates an analog input signal having the input audio and the output audio. The A/D converter generates a digital input signal according to the analog input signal. The processor cancels the output audio to generate a second (digital) sound signal according to the digital input signal and the external reference signal. Finally, the processor transmits the second (digital) sound signal to the electronic device via the audio I/O terminal.

Abstract: The disclosure provides an audio processing device, an audio processing method for controlling a plurality of speakers, and a computer program product. The audio processing device includes a memory, a transceiver, and a processor. The memory stores a plurality of modules. The transceiver is wirelessly paired with a plurality of speakers. The processor executes the modules to perform following steps: requesting each of the speakers to output an audio positioning signal; collecting the audio positioning signal from each of the speakers; retrieving a location of each of the speakers relative to the audio processing device according to the audio positioning signal from each of the speakers; adjusting a plurality of audio contents based on the location of each of the speakers relative to the audio processing device; and sending the audio contents to the speakers to control the speakers outputting the audio contents.

Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a metal-oxide-semiconductor (MOS) transistor, and a dielectric layer. The MOS transistor includes a gate structure formed over the substrate. The dielectric layer is formed aside the gate structure, and the dielectric layer is doped with a strain modulator. An effective lattice constant of the dielectric layer doped with the strain modulator is different from an original lattice constant of the dielectric layer prior to be doped with the strain modulator, wherein the strain modulator at least comprises silicon.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first fin structure over a semiconductor substrate. The semiconductor device structure also includes a second fin structure over the semiconductor substrate. The second fin structure has a lower height than that of the first fin structure. The second fin structure includes a first sidewall and a second sidewall, and the first sidewall and the second sidewall surround a recess over the second fin structure.

Abstract: Methods for forming a semiconductor structure are provided. The method includes forming a first dummy gate structure and forming first spacers over a sidewall of the first dummy gate structure. The method includes removing the first dummy gate structure to form a first trench between the first spacers and forming a first capping layer in the first trench. A first portion of the first capping layer covers a sidewall of the first trench and a second portion of the first capping layer covers a bottom surface of the first trench. The method further includes oxidizing a sidewall of the first portion of the first capping layer and a top surface of the second portion of the first capping layer to form a first capping oxide layer and forming a first work function metal layer and forming a first gate electrode layer over the first work function metal layer.