Abstract: The present invention relates to a wire coating apparatus capable of evenly coating an insulating thin film on the surface of a wire such as a bonding wire having a small diameter, and the wire insulating thin film coating apparatus according to the present invention comprises: a coating portion which coats the surface of the wire with the insulating thin film while being blocked from the outside; and a wire process setting portion which is installed to be movable to the inside and outside of the coating portion and on which the wire is wound while the inside and outside of the wire are exposed so that a coating process of the insulating thin film is performed in the coating portion.

Abstract: Provided is a bonding wire for a semiconductor package, which includes an insulating layer formed on the outer surface of a core portion by a thin layer deposition method, so that the occurrence of a short-circuit during wire bonding is fundamentally prevented and bondability is improved. The bonding wire for a semiconductor package comprises: a core portion formed of a conductive metal; and an insulating layer formed on the outer surface of the core portion by a thin layer deposition method.

Abstract: The present disclosure provides an adsorption tower for an oxygen generator system configured to adsorb nitrogen in air and supply oxygen, the tower comprising: a housing defining an inner space therein in which an adsorbing agent is filled; a housing inlet through which air enters into the housing; an housing outlet through which air is discharged from the housing, wherein the housing inlet is opposite to the housing outlet; a sodium based adsorbing agent layer disposed in the inner space and adjacent to the housing inlet; and a lithium-based adsorbing agent layer disposed in the inner space and adjacent the housing outlet.

Abstract: Disclosed is a horizontal-type atomic layer deposition apparatus for large-area substrates, in which a plurality of large-area substrates can be simultaneously subjected to an atomic layer deposition process in a state in which they are stacked in a horizontal position. The apparatus comprises: an outer chamber that is maintained in a vacuum state; an inner chamber provided in the outer chamber; a chamber cover configured to move upward and downward to open and close the bottom of the inner chamber; a cassette configured to move upward and downward with the chamber cover; a process gas injecting portion configured to inject a process gas into a space between a plurality of substrates loaded in the cassette; a gas discharge portion configured to suck and discharge the process gas; and a substrate introducing/discharging means configured to introduce the substrates into the outer chamber and discharge the substrates.

Abstract: Disclosed is an apparatus for batch-type large-area atomic layer deposition, which can perform an atomic layer deposition process on a plurality of large-area glass substrates. The apparatus comprises: a vacuum chamber; gate valves provided at both sides of the vacuum chamber; a process gas supply unit provided in the upper portion of the vacuum chamber and configured to inject laminar-flow process gas downward; a gas discharge unit provided in the lower portion of the vacuum chamber and configured to discharge gas from the vacuum chamber; a cassette configured to load a plurality of substrates and disposed between the process gas supply unit and the gas discharge unit; and an elevating unit provided at the side of the gas discharge unit in the vacuum chamber and configured in the vacuum chamber to elevate the cassette so as to bring the cassette into close contact with the process gas supply unit.

Abstract: Provided is a process for purifying human interferon beta from a recombinant human interferon beta-containing culture comprising performing affinity chromatography and cation exchange chromatography, wherein the affinity chromatography includes: adsorbing the interferon beta-containing culture to an equilibrated affinity chromatography column, followed by washing with an equilibration buffer solution; washing the column with a washing buffer solution A of pH 6.5-7.5 containing 30-60 wt % of propylene glycol and a washing buffer solution B of pH 6.5-7.5 containing 10-30 wt % of propylene glycol and 1-2M NaCl; and eluting a human interferon beta-containing fraction with a buffer solution of pH 6.5-7.5 containing 40-60 wt % of propylene glycol and 1-2M NaCl.

Abstract: Provided is a process for purifying human interferon beta from a recombinant human interferon beta-containing culture comprising performing affinity chromatography and reversed-phase high-performance liquid chromatography (RP-HPLC), wherein the affinity chromatography includes: adsorbing the interferon beta-containing culture to an equilibrated affinity chromatography column, followed by washing with an equilibration buffer solution; washing the column with a washing buffer solution A of pH 6.5-7.5 containing 30-60 wt % of propylene glycol and a washing buffer solution B of pH 6.5-7.5 containing 10-30 wt % of propylene glycol and 1-2M NaCl; and eluting a human interferon beta-containing fraction with a buffer solution of pH 6.5-7.5 containing 40-60 wt % of propylene glycol and 1-2M NaCl.