Abstract: An internet of vehicles system for dynamically marking risk area includes a cloud server communicating with a vehicle system. The cloud server includes a communication module, a planning module, a computation module, and a determination module. The communication module is configured to receive vehicle information from the vehicle system. The planning module is configured to formulate a dynamic risk area range according to a vehicle position of the vehicle information. The calculation module is configured to calculate a risk factor coefficient corresponding to the vehicle information and a risk intensity corresponding to the dynamic risk area range. The determination module is configured to determine whether the risk intensity is greater than or equal to a preset threshold value. The communication module notifies a warning to the vehicle system that the risk intensity of the dynamic risk area range is greater than the preset threshold value.

Abstract: A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.

Abstract: A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.

Abstract: A light sensing circuit for solving the problem of low reliability in illumination detection includes a photo transistor having a gate, a drain and a source; a first transistor electrically connecting between the gate and source of the photo transistor; a first capacitor electrically connecting between the gate and the drain of the photo transistor; a second transistor electrically connecting with the drain of the photo transistor, the first capacitor, and a data signal; a second capacitor electrically connecting between the source of the photo transistor and a ground contact; a third transistor electrically connecting with the photo transistor, the first transistor, and the second capacitor; and a switch adapted to alternatively connect the third transistor with a buffer or a zero signal. A control method of the above light sensing circuit is also disclosed. Therefore, the above identified problem can be surely solved.

Abstract: A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group IV-VI compound semiconductor film; the group IV-VI compound is one of geranium sulfide (GeS), germanium selenide (GeSe), germanium telluride (GeTe), tin selenide (SnSe), and tin telluride (SnTe) or a ternary, quaternary, or quinary compound thereof; the active layer is deposited by sputtering; and thermal annealing is performed after the active layer is deposited. The thin-film transistor has high carrier mobility and a high current on/off ratio and therefore meets the needs of high-resolution display development.

Abstract: A light sensing circuit for solving the problem of low reliability in illumination detection includes a photo transistor having a gate, a drain and a source; a first transistor electrically connecting between the gate and source of the photo transistor; a first capacitor electrically connecting between the gate and the drain of the photo transistor; a second transistor electrically connecting with the drain of the photo transistor, the first capacitor, and a data signal; a second capacitor electrically connecting between the source of the photo transistor and a ground contact; a third transistor electrically connecting with the photo transistor, the first transistor, and the second capacitor; and a switch adapted to alternatively connect the third transistor with a buffer or a zero signal. A control method of the above light sensing circuit is also disclosed. Therefore, the above identified problem can be surely solved.

Abstract: A resistive random access memory (RRAM), a controlling method for the RRAM, and a manufacturing method therefor are provided. The RRAM includes a first electrode layer; a resistance switching layer disposed on the first electrode layer; a diffusion metal layer disposed on the resistance switching layer; and a second electrode layer disposed on the diffusion metal layer, wherein at least one extension electrode is disposed in the resistance switching layer.

Abstract: A resistive random access memory (RRAM), a controlling method for the RRAM, and a manufacturing method therefor are provided. The RRAM includes a first electrode layer; a resistance switching layer disposed on the first electrode layer; a diffusion metal layer disposed on the resistance switching layer; and a second electrode layer disposed on the diffusion metal layer, wherein at least one extension electrode is disposed in the resistance switching layer.