Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: A substrate table is provided. The substrate table includes a main body having a surface and a plurality of burls extending from the surface. The burls are configured to support a substrate on the main body. The substrate table further includes a number of vacuum channels provided in the burls to apply a vacuum to the substrate. The vacuum channels are distributed throughout the main body and arranged in a grid pattern.

Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: A substrate table is provided. The substrate table includes a main body configured to support a substrate thereon. The substrate table further includes a number of vacuum channels provided in the main body and respectively formed with a vacuum opening on a surface of the main body. The vacuum channels are configured to apply a vacuum to the substrate. The vacuum channels are distributed throughout the main body and arranged in a grid pattern.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; ejecting a first gas from a purging device above the wafer to clean a top surface of the wafer; after ejecting the first gas, lifting a lifting pin through the wafer chuck to receive the wafer; and after the wafer is received by the lifting pin, ejecting a second gas from first openings in a sidewall of the lifting pin to a region between a bottom surface of the wafer and a top surface of the wafer chuck.

Abstract: A method includes generating extreme ultraviolet (EUV) light. The EUV light is gathered onto a first region of a first optical reflector by using a collector. A second region of the first optical reflector is free from incidence of the EUV light when the EUV light is reflected onto the first region. The EUV light is reflected to a reticle by using the first optical reflector, so as to impart the EUV light with a pattern. The first optical reflector is rotated such that the EUV light is reflected onto the second region in a first time period and the EUV light is reflected onto the first region in a second period. The first region is free from incidence of the EUV light in the first time period, and the second region is free from incidence of the EUV light in the second time period.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; lifting a lifting pin through the wafer chuck to the wafer; introducing a gas to a region between the wafer and the wafer chuck through a plurality of first openings on a sidewall of the lifting pin; and lowering the lifting pin until the wafer reaches the wafer chuck.

Abstract: A method of performing a substrate detection process is provided. The method includes emitting a signal to a surface of a substrate from an emitter disposed in a substrate storage container. The method also includes collecting the signal reflected from the surface of the substrate by a receiver disposed in the substrate storage container. The method further includes transmitting data corresponding to the collected signal to a signal processor. In addition, the method includes analyzing the data, and determining whether an action is to be performed on the substrate based on the analyzing.

Abstract: A method for fabricating a wafer includes providing a wafer table, wherein the wafer table includes support pins that are movable with respect to each other; identifying features of a layer to be formed on a wafer, wherein the features have a tolerance for overlay errors below a threshold; moving one or more support pins based on the features; after the moving of the one or more support pins, mounting the wafer on the wafer table; and after the mounting of the wafer on the wafer table, forming the layer on the wafer.

Abstract: A method includes generating extreme ultraviolet (EUV) light. The EUV light is gathered onto a first region of a first optical reflector by using a collector. A second region of the first optical reflector is free from incidence of the EUV light when the EUV light is reflected onto the first region. The EUV light is reflected to a reticle by using the first optical reflector, so as to impart the EUV light with a pattern. The first optical reflector is rotated such that the EUV light is reflected onto the second region in a first time period and the EUV light is reflected onto the first region in a second period. The first region is free from incidence of the EUV light in the first time period, and the second region is free from incidence of the EUV light in the second time period.

Abstract: An apparatus is provided, including a substrate storage container. A substrate detecting system is disposed in the substrate storage container. The substrate detecting system includes at least an emitter and a receiver. The substrate detecting system is configured to detect a substrate condition of a substrate in the substrate storage container.

Abstract: A display device includes at least one speaker, a signal transceiver and a processor. The at least one speaker outputs a sound according to a volume parameter. The signal transceiver receives incoming call information from a communication device. The processor is electrically coupled to the at least one speaker and the signal transceiver. The processor detects signal strength of the communication device and adjusts the volume parameter according to the incoming call information and the signal strength, in order to increase or decrease a volume of the sound.

Abstract: A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.

Abstract: A system includes a frame, a projection lens, a wafer table, and a cleaner. The frame has an opening vertically extending through the frame. The projection lens is disposed on the frame. The wafer table is below the frame, in which the wafer table is movable along a horizontal direction. The cleaner is over the frame, in which the cleaner comprises a sticky structure movable along a vertical direction and through the opening of the frame.

Abstract: A method is provided. The method includes steps as follows. EUV light is generated. A collector is used to gather the EUV light onto a first optical reflector. The first optical reflector is used to reflect the EUV light to a reticle, so as to impart the EUV light with a pattern. A second optical reflector is used to reflect the EUV light with the pattern onto a wafer. The first optical reflector is rotated.

Abstract: A method of lithography includes obtaining a profile of a single field of a substrate that having a photoresist layer thereon, in which the profile includes a first feature and a second feature having different heights. A depth of focus distribution map is generated according to the profile. A project lens is tuned based on the generated depth of focus distribution map, such that the project lens provides a first focus length in a first project pixel of the project lens and a second focus length in a second project pixel of the project lens, wherein the first focus length and the second focus lengths. The single field of the substrate is exposed by using the tuned project lens.

Abstract: A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.

Abstract: A method includes moving a sticky structure to a wafer table such that a first particle on the wafer table is adhered to the sticky structure, moving the sticky structure away from the wafer table after the first particle is adhered to the sticky structure, and performing a lithography process to a wafer held by the wafer table after moving the sticky structure away from the wafer table.

Abstract: A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.

Abstract: A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.