Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

Abstract: The present disclosure relates to a gas sensor including a nanopore electrode and a fluorine compound coated on the nanopore electrode, and also relates to a preparing method of the gas sensor.

Abstract: Provided is an integrated optical current sensor for measuring the magnitude of current. The integrated optical current sensor is fabricated by integrating optical elements, such as a thermo-optic phase modulator, a waveguide polarizer and an optical coupler, on a single substrate. As compared to the known current sensors using optical fibers, the integrated optical current sensor is more compact and enables measurement of current with higher reliability. Provided also is a method for producing current sensor chips in a large scale by using a process for fabricating integrated optical elements.

Abstract: The present disclosure relates to a gas sensor including a nanopore electrode and a fluorine compound coated on the nanopore electrode, and also relates to a preparing method of the gas sensor.

Abstract: Provided is an integrated optical current sensor for measuring the magnitude of current. The integrated optical current sensor is fabricated by integrating optical elements, such as a thermo-optic phase modulator, a waveguide polarizer and an optical coupler, on a single substrate. As compared to the known current sensors using optical fibers, the integrated optical current sensor is more compact and enables measurement of current with higher reliability. Provided also is a method for producing current sensor chips in a large scale by using a process for fabricating integrated optical elements.

Abstract: An electro-optic modulator is formed from all flexible materials, to form a flexible electro-optic modulator. The formation process uses a photoresist which selectively adheres to one material more than it adheres to another material. This allows selective liftoff, where only parts of the substrate are lifted off. For example, this allows silicon ends on the modulator, thereby facilitating pig tailing and also facilitates handling. Another aspect describes testing the bending radius.

Abstract: An electro-optic modulator is formed from all flexible materials, to form a flexible electro-optic modulator. The formation process uses a photoresist which selectively adheres to one material more than it adheres to another material. This allows selective liftoff, where only parts of the substrate are lifted off. For example, this allows silicon ends on the modulator, thereby facilitating pig tailing and also facilitates handling. Another aspect describes testing the bending radius.

Abstract: A tapered electrooptic (EO) polymer waveguide interconnection structure coupling an EO polymer waveguide and a passive polymer waveguide and a method of fabricating the same.

Abstract: An electro-optical modulator and a method for biasing a Mach-Zehnder modulator. The inventive modulator includes a layer of material at least partially transparent to electromagnetic energy. A first conductive layer is disposed on a first surface of the layer of at least partially transparent material. A second conductive layer is disposed on a second surface of the layer of at least partially transparent material. A layer of insulating material is disposed on the second conductive layer and a third conductive layer is disposed on the layer of insulating material. In the illustrative application, the modulator is a Mach-Zehnder modulator. A biasing potential is applied to the second conductive layer of the modulator and a modulating voltage is applied across the first and the third conductive layers.

Abstract: A tapered electrooptic (EO) polymer waveguide interconnection structure coupling an EO polymer waveguide and a passive polymer waveguide and a method of fabricating the same.

Abstract: An electro-optical modulator and a method for biasing a Mach-Zehnder modulator. The inventive modulator includes a layer of material at least partially transparent to electro-magnetic energy. A first conductive layer is disposed on a first surface of the layer of at least partially transparent material. A second conductive layer is disposed on a second surface of the layer of at least partially transparent material. A layer of insulating material is disposed on the second conductive layer and a third conductive layer is disposed on the layer of insulating material. In the illustrative application, the modulator is a Mach-Zehnder modulator. A biasing potential is applied to the second conductive layer of the modulator and a modulating voltage is applied across the first and the third conductive layers.

Abstract: Method for manufacturing an electro-optic polymer waveguide device including the step of electrode poling an electro-optic polymer material of the device in an oxygen-free environment. In a preferred embodiment, the electrode poling is performed at a temperature close to a glass transition temperature of the electro-optic polymer material.

Abstract: A method of fabricating a thermooptic tunable wavelength filter of optical communication systems using WDM is provided, which includes the steps of forming a polymer optical waveguide on a semiconductor substrate using a polymer material, forming a polymer Bragg grating on the optical waveguide using O2 RIE and polymer spin coating, and forming a thermooptic tuning electrode over the polymer optical waveguide in which the Bragg grating is integrated. This provides the thermooptical tunable wavelength filter which has very narrow wavelength band width of transmission signal, low crosstalk with optical signals adjacent thereto, stable wavelength tuning characteristic using thermooptic effect and wide tuning ranges. Furthermore, the optical devices using the polymer optical waveguide can be fabricated with low cost. Thus, they have advantages in terms of economy and marketability.

Abstract: An electro-optic polymer waveguide device capable of decreasing a driving voltage and an optical loss is disclosed. A vertical tapered waveguide is formed between passive waveguides of input and output portions in a waveguide and an electro-optic modulating region, and an amplitude of a waveguide mode of the input and output portion waveguide is equal to that of a optical fiber, thereby minimizing a connection loss with the optical fiber.

Abstract: The present invention relates to a wavelength insensitive passive polarization converter which can rotate the direction of optic axis of waveguide by employing poled electro-optic polymer waveguides and a method for controlling the optic axis direction of the poled polymer waveguides. A passive polarization converter of present invention is equipped with poling electrodes at top and bottom of a planar waveguide consisting of three layers of electro-optic polymer, and it comprises: a polarizer in which poling-induced optic axis aligned horizontally; a polarization rotator in which the azimuth angle of the optic axis is slowly changed along the propagation direction from horizontal to vertical direction; and, an analyzer in which poling-induced optic axis aligned vertically.

Abstract: A spatial switch of a simple structure using a "M.times.N" optical beam steering device which operates with M "1.times.N" spatial switches using a phased optical waveguide array. The spatial switch using an optical beam steering device in accordance with the present invention is characterized in that the optical beam steering device includes an optical waveguide phase modulator array, the optical beam steering device is used as a "1.times.N" spatial switch device, and M units of the "1.times.N" spatial switch device are aligned in parallel so that a "M.times.N" spatial switching operation is performed on a plane where a far field diffraction pattern of the "1.times.N" spatial switch device is formed. The spatial switch utilizes the characteristics that if the propagation directions of the lights output from "1.times.N" switches coincide with each other, the far field diffraction patterns formed by the switches converge into the same point.