Patents by Inventor Min-Chi Fan

Min-Chi Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SiGe MOSFET with an erosion preventing SiGelayer
    Patent number: 7176504
    Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SixGey layer and a SixGey protection layer. The gate structure is deposited on the substrate and the spacer is deposited on the sidewalls of the gate structure. The SixGey layer is deposited in the substrate on both sides of the spacer and extended to a portion beneath part of the spacer. In addition, the top level of the SixGey layer is higher than the surface of the substrate. Moreover, the SixGey protection layer is deposited on the SixGey layer and the SixGey protection layer comprises Six1Gey1, where 0?y1<y.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: February 13, 2007
    Assignee: United Microelectronics Corp.
    Inventors: Huan-Shun Lin, Hung-Lin Shih, Hsiang-Ying Wang, Jih-Shun Chiang, Min-Chi Fan