Abstract: A semiconductor device includes a substrate having a front side and a back side opposite to each other. A plurality of photodetectors is disposed in the substrate within a pixel region. An isolation structure is disposed within the pixel region and between the photodetectors. The isolation structure includes a back side isolation structure extending from the back side of the substrate to a position in the substrate. A conductive plug structure is disposed in the substrate within a periphery region. A conductive cap is disposed on the back side of the substrate and extends from the pixel region to the periphery region and electrically connects the back side isolation structure to the conductive plug structure. A conductive contact lands on the conductive plug structure, and is electrically connected to the back side isolation structure through the conductive plug structure and the conductive cap.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a source/drain region disposed over a substrate, a gate electrode layer disposed over the substrate, a first gate spacer disposed between the gate electrode layer and the source/drain region, and a dielectric spacer disposed between the gate electrode layer and the source/drain region. A first portion of the dielectric spacer is in contact with a first portion of the first gate spacer. The structure further includes a sacrificial layer disposed between a second portion of the first gate spacer and a second portion of the dielectric spacer.

Abstract: An apparatus may include an ultrasonic sensor stack, a foldable display stack and a transmission enhancement layer. The foldable display stack may include a display stiffener and display stack layers. The display stack layers may form one or more display stack resonators configured to enhance ultrasonic waves transmitted by the ultrasonic sensor stack in a first ultrasonic frequency range. In some implementations, a transmission enhancement resonator may include the display stiffener and the transmission enhancement layer. In some examples, the transmission enhancement resonator may include at least a portion of the ultrasonic sensor stack. The transmission enhancement resonator may be configured to enhance the ultrasonic waves transmitted by the ultrasonic sensor stack in the first ultrasonic frequency range.

Abstract: A structure for enhancing sidewall marking contrast and tire with the same are disclosed. The structure includes a plurality of structural units each having at least three quadrilaterals extending outward radiatively from a center thereof so that the structural unit form a code on a sidewall of a tire. The structure enhances sidewall marking contrast and increase observability of the code against the sidewall, thereby helping impress consumers with accentuated product distinctiveness and/or brand image.