Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference signals. A transmitter transmits an output command and address signal to a memory device according to the reference signals. A signal training circuit executes a training process in a training mode that includes steps outlined below. A training signal is generated such that the training signal is transmitted as the output command and address signal. The training signal and the data signal generated by the memory device are compared to generate a comparison result indicating whether the data signal matches the training signal. The comparison result is stored. The clock generation circuit is controlled to modify a phase of at least one of the reference signals to be one of a plurality of under-test phases to execute a new loop of the training process until all the under-test phases are trained.

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, micro light emitting elements, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting elements are disposed on the first adhesive layer and have a first surface facing to the first adhesive layer and an opposing second surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting elements and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A thickness of the flexible substrate is less than 100 um.

Abstract: A light-emitting device includes a substrate, an active device, a first light-shielding layer, a transparent electrode, a second light-shielding layer, a light-converting layer, an electroluminescent structure, and a top electrode. The active device is located on the substrate. The first light-shielding layer is disposed on the active device and has a first opening. The transparent electrode is located on the first light-shielding layer and electrically connected to the active device. The second light-shielding layer is located on the transparent electrode and has a second opening corresponding to the first opening. The light-converting layer is substantially located in the first opening. The electroluminescent structure is substantially located in the second opening. The transparent electrode is located between the first opening and the second opening. The electroluminescent structure is located between the top electrode and the transparent electrode.

Abstract: A light-emitting device includes a substrate, an active device, a first light-shielding layer, a transparent electrode, a second light-shielding layer, a light-converting layer, an electroluminescent structure, and a top electrode. The active device is located on the substrate. The first light-shielding layer is disposed on the active device and has a first opening. The transparent electrode is located on the first light-shielding layer and electrically connected to the active device. The second light-shielding layer is located on the transparent electrode and has a second opening corresponding to the first opening. The light-converting layer is substantially located in the first opening. The electroluminescent structure is substantially located in the second opening. The transparent electrode is located between the first opening and the second opening. The electroluminescent structure is located between the top electrode and the transparent electrode.