Abstract: A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

Abstract: A receptacle includes a receptacle body including a space in which first contents is held and a coupling portion having an inlet, a receptacle stopper coupled to the coupling portion of the receptacle body, and a second contents holding portion including a holding part having an open upper part and holding second contents, a support portion located to surround the holding part to support the holding part, and a mounting portion connected to the support portion and coupled to an upper end of the coupling portion. The receptacle stopper includes: a cap portion, a protrusion located on an inner side surface of the cap portion and including first and second protrusion parts located to be spaced apart from an upper end of the cap portion by different distances, and a sealing portion located between an inner upper surface of the cap portion and the protrusion and sealing the holding part.

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

Abstract: Provided is an air cooled combustion furnace system to effectively operate a combustion furnace for generation of heat energy via combustion of a solid fuel so as to optimize thermal efficiency. The combustion furnace system includes a combustion body structure provided with a hopper and having a combustion space for production of heat energy via combustion of a solid fuel, a cooling device integrally formed in multiple layers with the combustion body structure to cool the combustion body structure via distribution of air, a negative pressure induction device to create a negative pressure within the combustion body structure by suctioning air, a fuel supply device, a grate device constructed by coupling a plurality of grate segments to one another and serving to support the solid fuel being combusted, and a clinker removal device to remove clinkers generated during combustion of the solid fuel from the grate device.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a gate electrode on the substrate. The semiconductor device includes a gate contact on the gate electrode. In some embodiments, a fin-shaped body protrudes from the substrate, and the gate electrode is on the fin-shaped body. Moreover, in some embodiments, the gate contact is partially in the gate electrode.

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

Abstract: Methods are provided for manufacturing semiconductor devices include forming a first fin protruding on a substrate and extending in a first direction; forming first and second sacrificial gate insulating layers on the first fin, the first and second sacrificial gate insulating layers intersecting the first fin and being spaced apart from each other; forming first and second sacrificial gate electrodes respectively on the first and second sacrificial gate insulating layers; forming a first insulating layer on the first and second sacrificial gate electrodes; removing a portion of the first insulating layer to expose the second sacrificial gate electrode; removing the exposed second sacrificial gate electrode using a first etching process to expose the second sacrificial gate insulating layer; removing the exposed second sacrificial gate insulating layer using a second etching process different from the first etching process to form a first trench which exposes the first fin; forming a first recess in the expos

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a gate electrode on the substrate. The semiconductor device includes a gate contact on the gate electrode. In some embodiments, a fin-shaped body protrudes from the substrate, and the gate electrode is on the fin-shaped body. Moreover, in some embodiments, the gate contact is partially in the gate electrode.

Abstract: Provided is an air cooled combustion furnace system to effectively operate a combustion furnace for generation of heat energy via combustion of a solid fuel so as to optimize thermal efficiency. The combustion furnace system includes a combustion body structure provided with a hopper and having a combustion space for production of heat energy via combustion of a solid fuel, a cooling device integrally formed in multiple layers with the combustion body structure to cool the combustion body structure via distribution of air, a negative pressure induction device to create a negative pressure within the combustion body structure by suctioning air, a fuel supply device, a grate device constructed by coupling a plurality of grate segments to one another and serving to support the solid fuel being combusted, and a clinker removal device to remove clinkers generated during combustion of the solid fuel from the grate device.

Abstract: A separation, purification and recovery method of SF6, HFCs or PFCs is disclosed, which comprises a step for forming a gas hydrate including components in addition to SF6, HFCs or PFCs. It is possible to separate and recover fluoro-gas at a much lower cost as compared to a conventional method for thereby obtaining an economical effect and preventing an emission of SF6, HFCs or PFCs which corresponds to Non-CO2 having a higher earth warming index, which leads to preventing an earth warming phenomenon. So, the present invention might be widely applied.

Abstract: A separation, purification and recovery method of SF6, HFCs or PFCs is disclosed, which comprises a step for forming a gas hydrate including components in addition to SF6, HFCs or PFCs. It is possible to separate and recover fluoro-gas at a much lower cost as compared to a conventional method for thereby obtaining an economical effect and preventing an emission of SF6, HFCs or PFCs which corresponds to Non-CO2 having a higher earth warming index, which leads to preventing an earth warming phenomenon. So, the present invention might be widely applied.