Abstract: A method for manufacturing a light emitting display device, includes preparing a substrate having an active area and edge areas around the active area, forming a first electrode in each of a plurality of subpixels in the active area, forming a first common layer configured to cover an entirety of the active area and to have a first process margin in the edge areas outside the active area, forming a conductivity improvement layer on the first common layer in the edge areas, forming a light emitting layer in each of the subpixels, forming a second common layer having a large size than a size of the active area, on the light emitting layer, and forming a second electrode having a second process margin in the edge areas to cover at least the first common layer, on the second common layer.

Abstract: A method for manufacturing a light emitting display device, includes preparing a substrate having an active area and edge areas around the active area, forming a first electrode in each of a plurality of subpixels in the active area, forming a first common layer configured to cover an entirety of the active area and to have a first process margin in the edge areas outside the active area, forming a conductivity improvement layer on the first common layer in the edge areas, forming a light emitting layer in each of the subpixels, forming a second common layer having a large size than a size of the active area, on the light emitting layer, and forming a second electrode having a second process margin in the edge areas to cover at least the first common layer, on the second common layer.

Abstract: Disclosed are a light emitting display device and a method for manufacturing the same. The light emitting display device changes a configuration of common layers disposed in edge areas and can thus satisfy structural characteristics of a narrow bezel and prevent light leakage generated around the edge areas.

Abstract: Disclosed are a light emitting display device and a method for manufacturing the same. The light emitting display device changes a configuration of common layers disposed in edge areas and can thus satisfy structural characteristics of a narrow bezel and prevent light leakage generated around the edge areas.

Abstract: In an interface board for testing a multichip package, the multichip package includes a first type semiconductor chip and a second type semiconductor chip, the interface board includes a first surface facing the multichip package and a second surface facing a test apparatus, the first surface includes upper terminals that are electrically connected to terminals of the multichip package, the second surface includes lower terminals that are electrically connected to the test apparatus, and the upper terminals include a first upper terminal group for testing the first type semiconductor chip and a second upper terminal group for testing whether a crack defect exists in the second type semiconductor chip.

Abstract: In an interface board for testing a multichip package, the multichip package includes a first type semiconductor chip and a second type semiconductor chip, the interface board includes a first surface facing the multichip package and a second surface facing a test apparatus, the first surface includes upper terminals that are electrically connected to terminals of the multichip package, the second surface includes lower terminals that are electrically connected to the test apparatus, and the upper terminals include a first upper terminal group for testing the first type semiconductor chip and a second upper terminal group for testing whether a crack defect exists in the second type semiconductor chip.