Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises forming active patterns on a substrate that includes first and second logic cell regions adjacent to each other in a first direction, and forming on the substrate a device isolation layer exposing upper portions of the active patterns. The forming the active patterns comprises forming first line mask patterns extending parallel to each other in the first direction and running across the first and second logic cell regions, forming on the first line mask patterns an upper separation mask pattern including a first opening overlapping at least two of the first line mask patterns, forming first hardmask patterns from the at least two first line mask patterns, and etching the substrate to form trenches defining the active patterns.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises forming active patterns on a substrate that includes first and second logic cell regions adjacent to each other in a first direction, and forming on the substrate a device isolation layer exposing upper portions of the active patterns. The forming the active patterns comprises forming first line mask patterns extending parallel to each other in the first direction and running across the first and second logic cell regions, forming on the first line mask patterns an upper separation mask pattern including a first opening overlapping at least two of the first line mask patterns, forming first hardmask patterns from the at least two first line mask patterns, and etching the substrate to form trenches defining the active patterns.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises forming active patterns on a substrate that includes first and second logic cell regions adjacent to each other in a first direction, and forming on the substrate a device isolation layer exposing upper portions of the active patterns. The forming the active patterns comprises forming first line mask patterns extending parallel to each other in the first direction and running across the first and second logic cell regions, forming on the first line mask patterns an upper separation mask pattern including a first opening overlapping at least two of the first line mask patterns, forming first hardmask patterns from the at least two first line mask patterns, and etching the substrate to form trenches defining the active patterns.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises forming active patterns on a substrate that includes first and second logic cell regions adjacent to each other in a first direction, and forming on the substrate a device isolation layer exposing upper portions of the active patterns. The forming the active patterns comprises forming first line mask patterns extending parallel to each other in the first direction and running across the first and second logic cell regions, forming on the first line mask patterns an upper separation mask pattern including a first opening overlapping at least two of the first line mask patterns, forming first hardmask patterns from the at least two first line mask patterns, and etching the substrate to form trenches defining the active patterns.

Abstract: An optical waveguide intensity modulator of a polymer waveguide utilizes and electro-optic effect and optical birefringence induced from a poling process of a nonlinear polymer thin-film. The optical waveguide intensity modulator is constructed by a series combination of a TE/TM mode selector, a TE or TM mode converter and another TE or TM mode selector. In the polymer waveguide, the mode selectors and mode converter can be easily obtained by making the direction of a poling field to be horizontal (or vertical) and approximately 45.degree. direction. According to the present invention, the optical waveguide intensity modulator is formed by integrating the TE or TM mode selectors and the TE or TM mode converter onto a single substrate. Further, because no element, is required which results in optical loses for example an optical isolator, an optical coupler or a curved portion of the waveguide, the efficiency of the device can be improved.

Abstract: A TE-TM mode converter of a polymer electro-optic polarization waveguide type uses the electro-optic birefringence and the electro-optic effect as a non-linear optical waveguide medium, in which an optical director formed during the poling of a polymer thin film is determined by the direction of the poling electrical field. The poling electrode design enables the optical director having the angle of 45.degree. to the electrical direction of the TE and TM modes to be formed in the polymer thin film. When the waveguide receives the incident light of the TE mode or TM mode, the TE (or TM) mode is switched into the TM (or TE) mode by an effective refraction factor between the optical director and the director perpendicular thereto. If a length of the poling electrode and the birefringence of the waveguide is adjusted, the changes of various electo-optic polarization states are possible. The poled thin film has an electro-optic effect.