Patents by Inventor Min-chul San

Min-chul San has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8008177
    Abstract: A method for fabricating a semiconductor device is provided using a nickel salicide process. The method includes forming a gate pattern and a source/drain region on a silicon substrate, forming a Ni-based metal layer for silicide on the silicon substrate where the gate pattern and the source/drain region are formed, and forming an N-rich titanium nitride layer on the Ni-based metal layer for silicide. Next, a thermal treatment is applied to the silicon substrate where the Ni-based metal layer for silicide and the N-rich titanium nitride layer are formed, thereby forming a nickel silicide on each of the gate pattern and the source/drain region. Then, the Ni-based metal layer for silicide and the N-rich titanium nitride layer are selectively removed to expose a top portion of a nickel silicide layer formed on the gate pattern and the source/drain region.
    Type: Grant
    Filed: July 17, 2003
    Date of Patent: August 30, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-chul San, Ja-hum Ku, Chul-sung Kim, Kwan-jong Roh, Min-joo Kim
  • Publication number: 20040097060
    Abstract: A method for fabricating a semiconductor device is provided using a nickel salicide process. The method includes forming a gate pattern and a source/drain region on a silicon substrate, forming a Ni-based metal layer for silicide on the silicon substrate where the gate pattern and the source/drain region are formed, and forming an N-rich titanium nitride layer on the Ni-based metal layer for silicide. Next, a thermal treatment is applied to the silicon substrate where the Ni-based metal layer for silicide and the N-rich titanium nitride layer are formed, thereby forming a nickel silicide on each of the gate pattern and the source/drain region. Then, the Ni-based metal layer for silicide and the N-rich titanium nitride layer are selectively removed to expose a top portion of a nickel silicide layer formed on the gate pattern and the source/drain region.
    Type: Application
    Filed: July 17, 2003
    Publication date: May 20, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Min-Chul San, Ja-Hum Ku, Chul-Sung Kim, Kwan-Jong Roh, Min-Joo Kim