Abstract: An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A through via extends along a first direction through the dielectric layer and through the device substrate from the first side to the second side. The through via has a total length along the first direction and a width along a second direction that is different than the first direction. The total length is a sum of a first length of the through via in the dielectric layer and a second length of the through via in the device substrate. The first length is less than the second length. A guard ring is disposed in the dielectric layer and around the through via.

Abstract: A socket of a testing tool is configured to provide testing signals. A device-under-test (DUT) board is configured to provide electrical routing. An integrated circuit (IC) die is disposed between the socket and the DUT board. The testing signals are electrically routed to the IC die through the DUT board. The IC die includes a substrate in which plurality of transistors is formed. A first structure contains a plurality of first metallization components. A second structure contains a plurality of second metallization components. The first structure is disposed over a first side of the substrate. The second structure is disposed over a second side of the substrate opposite the first side. A trench extends through the DUT board and extends partially into the IC die from the second side. A signal detection tool is configured to detect electrical or optical signals generated by the IC die.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a metal line over a first substrate, a second substrate over the metal line, and a through-via penetrating through the second substrate and landing on the metal line. The through-via includes a copper fill having at least 85% (111) crystal orientation. The through-via includes a top portion with a first top width over a bottom portion with a second top width that is smaller than the first top width, and the top portion includes a first bulk portion over a first footing feature. The first bulk portion has first sidewalls, the first footing feature has second sidewalls, and the second sidewalls slant inwards from the first sidewalls to narrow the through-via from the first top width of the top portion to the second top width of the bottom portion.

Abstract: Integrated circuit (IC) structures and methods for forming the same are provided. An IC structure according to the present disclosure includes a substrate, an interconnect structure over the substrate, a guard ring structure disposed in the interconnect structure, a via structure vertically extending through the guard ring structure, and a top metal feature disposed directly over and in contact with the guard ring structure and the via structure. The guard ring structure includes a plurality of guard ring layers. Each of the plurality of guard ring layers includes a lower portion and an upper portion disposed over the lower portion. Sidewalls of the lower portions and upper portions of the plurality of guard ring layers facing toward the via structure are substantially vertically aligned to form a smooth inner surface of the guard ring structure.

Abstract: A semiconductor article which includes a semiconductor substrate, a back end of the line (BEOL) wiring portion on the semiconductor substrate, a through silicon via and a guard ring. The semiconductor substrate is made of a semiconductor material. The BEOL wiring portion includes a plurality of wiring layers having electrically conductive wiring and electrical insulating material. The through silicon via provides a conductive path through the BEOL wiring portion and the semiconductor substrate. The guard ring surrounds the through silicon via in the BEOL wiring portion and in some embodiments in the semiconductor substrate.

Abstract: A semiconductor article which includes a semiconductor substrate, a back end of the line (BEOL) wiring portion on the semiconductor substrate, a through silicon via and a guard ring. The semiconductor substrate is made of a semiconductor material. The BEOL wiring portion includes a plurality of wiring layers having electrically conductive wiring and electrical insulating material. The through silicon via provides a conductive path through the BEOL wiring portion and the semiconductor substrate. The guard ring surrounds the through silicon via in the BEOL wiring portion and in some embodiments in the semiconductor substrate.

Abstract: A semiconductor article which includes a semiconductor substrate, a back end of the line (BEOL) wiring portion on the semiconductor substrate, a through silicon via and a guard ring. The semiconductor substrate is made of a semiconductor material. The BEOL wiring portion includes a plurality of wiring layers having electrically conductive wiring and electrical insulating material. The through silicon via provides a conductive path through the BEOL wiring portion and the semiconductor substrate. The guard ring surrounds the through silicon via in the BEOL wiring portion and in some embodiments in the semiconductor substrate.

Abstract: A socket of a testing tool is configured to provide testing signals. A device-under-test (DUT) board is configured to provide electrical routing. An integrated circuit (IC) die is disposed between the socket and the DUT board. The testing signals are electrically routed to the IC die through the DUT board. The IC die includes a substrate in which plurality of transistors is formed. A first structure contains a plurality of first metallization components. A second structure contains a plurality of second metallization components. The first structure is disposed over a first side of the substrate. The second structure is disposed over a second side of the substrate opposite the first side. A trench extends through the DUT board and extends partially into the IC die from the second side. A signal detection tool is configured to detect electrical or optical signals generated by the IC die.

Abstract: An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A through via extends along a first direction through the dielectric layer and through the device substrate from the first side to the second side. The through via has a total length along the first direction and a width along a second direction that is different than the first direction. The total length is a sum of a first length of the through via in the dielectric layer and a second length of the through via in the device substrate. The first length is less than the second length. A guard ring is disposed in the dielectric layer and around the through via.

Abstract: An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A through via extends along a first direction through the dielectric layer and through the device substrate from the first side to the second side. A guard ring is disposed in the dielectric layer and around the through via. The guard ring includes metal layers stacked along the first direction. The metal layers include first sidewalls and second sidewall. The first sidewalls form an inner sidewall of the guard ring. An overlap between the first sidewalls of the metal layers is less than about 10 nm. The overlap is along a second direction different than the first direction.

Abstract: A semiconductor article which includes a semiconductor substrate, a back end of the line (BEOL) wiring portion on the semiconductor substrate, a through silicon via and a guard ring. The semiconductor substrate is made of a semiconductor material. The BEOL wiring portion includes a plurality of wiring layers having electrically conductive wiring and electrical insulating material. The through silicon via provides a conductive path through the BEOL wiring portion and the semiconductor substrate. The guard ring surrounds the through silicon via in the BEOL wiring portion and in some embodiments in the semiconductor substrate.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A semiconductor device comprises a substrate comprising a major surface and a plurality of metal bumps on the major surface. Each of the plurality of metal bumps comprises a metal via on the major surface and a metal pillar on the metal via having an overlay offset between the metal pillar and metal via. A first metal bump of the metal bumps has a first overlay offset and a second metal bump of the metal bumps farther than the first metal bump to a centroid of the substrate has a second overlay offset greater than the first overlay offset.