Abstract: A semiconductor device package includes a copper lead frame, a copper oxide compound layer and an encapsulant. The copper oxide compound layer is in contact with a surface of the copper lead frame. The copper oxide compound layer includes a copper(II) oxide, and a thickness of the copper oxide compound layer is in a range from about 50 nanometers to about 100 nanometers. The encapsulant is in contact with a surface of the copper oxide compound layer.

Abstract: A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

Abstract: A semiconductor device package includes a copper lead frame, a copper oxide compound layer and an encapsulant. The copper oxide compound layer is in contact with a surface of the copper lead frame. The copper oxide compound layer includes a copper(II) oxide, and a thickness of the copper oxide compound layer is in a range from about 50 nanometers to about 100 nanometers. The encapsulant is in contact with a surface of the copper oxide compound layer.

Abstract: A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

Abstract: A bonding structure includes a substrate having a top surface and including at least one bonding pad. Each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface. A semiconductor element includes at least one pillar. Each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.

Abstract: The present disclosure relates to bonding structures useful in semiconductor packages and methods of manufacturing the same. In an embodiment, the bonding structure comprises a substrate, having a top surface and including at least one bonding pad, wherein each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface; and a semiconductor element including at least one pillar, wherein each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.