Abstract: Disclosed is a method of analyzing layouts of semiconductor integrated circuit devices. The method includes calculating random fault rates, systematic fault rates, parametric fault rates, and areas of a plurality of layouts of interest; calculating area-based fault rates of the plurality of layouts of interest using the random fault rate, systematic fault rate, parametric fault rate, and area; and selecting layouts of interest to be corrected from among the plurality of layouts of interest using the area-based fault rates of the plurality of layouts of interest.

Abstract: A method of enhancing yield of semiconductor integrated circuit includes determining multiple experimental values, each experimental value corresponding to a distance from a side of a hole to an opposing side of a shape surrounding the hole, forming test patterns representing each of the experimental values on a wafer and calculating experimental value-based systematic fault rates from the test patterns; converting the experimental value-based systematic fault rates of the hole into the experimental value-based systematic fault rates, calculating a length of a side of the hole for which a distance between the side of the hole and the opposing side of the shape corresponds to each of experimental values, and calculating a systematic fault rate of the hole using the experimental value-based systematic fault rates per unit hole length and the length of the sides of the hole calculated for the respective experimental values in the desired layout.

Abstract: A method of enhancing yield of semiconductor integrated circuit includes determining multiple experimental values, each experimental value corresponding to a distance from a side of a hole to an opposing side of a shape surrounding the hole, forming test patterns representing each of the experimental values on a wafer and calculating experimental value-based systematic fault rates from the test patterns; converting the experimental value-based systematic fault rates of the hole into the experimental value-based systematic fault rates, calculating a length of a side of the hole for which a distance between the side of the hole and the opposing side of the shape corresponds to each of experimental values, and calculating a systematic fault rate of the hole using the experimental value-based systematic fault rates per unit hole length and the length of the sides of the hole calculated for the respective experimental values in the desired layout.

Abstract: Disclosed is a method of analyzing layouts of semiconductor integrated circuit devices. The method includes calculating random fault rates, systematic fault rates, parametric fault rates, and areas of a plurality of layouts of interest; calculating area-based fault rates of the plurality of layouts of interest using the random fault rate, systematic fault rate, parametric fault rate, and area; and selecting layouts of interest to be corrected from among the plurality of layouts of interest using the area-based fault rates of the plurality of layouts of interest.