Abstract: A light emitting device includes a substrate extending in a first direction and a second direction, first through fourth light emitting structures spaced apart from each other in the first and second direction and arranged in a matrix form on the substrate, a plurality of first interconnection layer structures connecting the first light emitting structure to the second light emitting structure, a second interconnection layer structure connecting the second light emitting structure to the third light emitting structure, and a plurality of third interconnection layer structures connecting the third light emitting structure to the fourth light emitting structure.

Abstract: A light emitting device includes a substrate extending in a first direction and a second direction, first through fourth light emitting structures spaced apart from each other in the first and second direction and arranged in a matrix form on the substrate, a plurality of first interconnection layer structures connecting the first light emitting structure to the second light emitting structure, a second interconnection layer structure connecting the second light emitting structure to the third light emitting structure, and a plurality of third interconnection layer structures connecting the third light emitting structure to the fourth light emitting structure.

Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.

Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.

Abstract: A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the increased resistance of metal fuse the electric and thermal conductivity is reduced, thereby increasing the thermal condensation efficiency of the fuse blowing region and improving the efficiency of the laser blowing process.

Abstract: A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the increased resistance of metal fuse the electric and thermal conductivity is reduced, thereby increasing the thermal condensation efficiency of the fuse blowing region and improving the efficiency of the laser blowing process.

Abstract: A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the increased resistance of metal fuse the electric and thermal conductivity is reduced, thereby increasing the thermal condensation efficiency of the fuse blowing region and improving the efficiency of the laser blowing process.

Abstract: A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the increased resistance of metal fuse the electric and thermal conductivity is reduced, thereby increasing the thermal condensation efficiency of the fuse blowing region and improving the efficiency of the laser blowing process.