Patents by Inventor Min Gye Lim

Min Gye Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flash memory and method for fabricating the same
    Patent number: 5841161
    Abstract: A flash memory is disclosed including a second conductivity-type substrate having first conductivity-type first and second impurity regions spaced apart from each other by a predetermined distance; a second conductivity-type floating gate formed above part of the first impurity region; a first conductivity-type floating gate formed over the second conductivity-type floating gate; and an insulating layer and first conductivity-type control gate sequentially formed on the first conductivity-type floating gate.
    Type: Grant
    Filed: March 3, 1997
    Date of Patent: November 24, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventors: Min Gye Lim, Eun Jeong Park