Patents by Inventor Min-Han Chuang
Min-Han Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220359975Abstract: An electronic package is provided, in which a ground layer is arranged on one side of an insulator, and a first antenna portion and a second antenna portion embedded in the insulator are vertically disposed on the ground layer, where a gap is formed between the first antenna portion and the second antenna portion, such that the first antenna portion and the second antenna portion are electrically matched with each other, and the ground layer is electrically connected to the second antenna portion but free from being electrically connected to the first antenna portion.Type: ApplicationFiled: June 28, 2021Publication date: November 10, 2022Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Chia-Chu Lai, Ho-Chuan Lin, Min-Han Chuang
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Publication number: 20220359374Abstract: An electronic module is provided, in which a first metal layer, an insulating layer and a second metal layer are sequentially formed on side faces and a non-active face of an electronic component to serve as a capacitor structure, where the capacitor structure is exposed from an active face of the electronic component so that by directly forming the capacitor structure on the electronic component, a distance between the capacitor structure and the electronic component is minimized, such that the effect of suppressing impedance can be optimized.Type: ApplicationFiled: September 2, 2021Publication date: November 10, 2022Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Ho-Chuan Lin, Chia-Chu Lai, Min-Han Chuang
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Publication number: 20220359324Abstract: An electronic package is provided, in which an electronic component with a conductive layer on an outer surface thereof is embedded in an encapsulant, where at least one electrode pad is disposed on an active surface of the electronic component, and at least one wire electrically connected to the electrode pad is arranged inside the electronic component, so that the conductive layer is electrically connected to the wire, such that the electrode pad, the wire and the conductive layer are used as a power transmission structure which serves as a current path to reduce DC resistance and improve an impedance issue associated with the supply of power.Type: ApplicationFiled: July 6, 2021Publication date: November 10, 2022Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Ho-Chuan Lin, Min-Han Chuang, Chia-Chu Lai
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Publication number: 20170271251Abstract: A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.Type: ApplicationFiled: June 2, 2017Publication date: September 21, 2017Inventors: Bo-Shiang Fang, Ho-Chuan Lin, Chia-Chu Lai, Min-Han Chuang, Li-Fang Lin
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Patent number: 9698090Abstract: A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.Type: GrantFiled: January 30, 2013Date of Patent: July 4, 2017Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Bo-Shiang Fang, Ho-Chuan Lin, Chia-Chu Lai, Min-Han Chuang, Li-Fang Lin
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Patent number: 9503043Abstract: A duplexer is provided, which includes a first, a second and a third signal ports; a first filter and a second filter. The first filter has first, second, and third resonant circuits that have first, second and third inductors, respectively. The first, second and third inductors are mutually inductive. The first and third resonant circuits are electrically connected to the first and second signal ports, respectively. The second filter has fourth, fifth and sixth resonant circuits that have fourth, fifth and sixth inductors, respectively. The fourth resonant circuit is connected in series with the first resonant circuit. The fifth inductor and the fourth inductor are mutually inductive. The sixth resonant circuit is electrically connected to the third signal port. The second filter further has a main capacitor connected in series with the fifth and sixth resonant circuits respectively and located therebetween.Type: GrantFiled: May 2, 2013Date of Patent: November 22, 2016Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Min-Han Chuang, Chia-Chu Lai, Bo-Shiang Fang, Ho-Chuan Lin, Yen-Yu Chen
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Patent number: 9281557Abstract: A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.Type: GrantFiled: November 26, 2013Date of Patent: March 8, 2016Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Chia-Chu Lai, Min-Han Chuang, Bo-Shiang Fang, Ho-Chuan Lin, Li-Fang Lin
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Patent number: 9196941Abstract: A cross-coupled bandpass filter includes first, second, third and fourth resonators such that magnetic couplings are generated between the first and second resonators, between the third and fourth resonators and between the first and fourth resonators, a capacitive coupling is generated between the second and third resonators, and the magnetic coupling between the first and fourth resonators has a polarity opposite to that of the capacitive coupling between the second and third resonators, thereby generating two transmission zeros in a transmission rejection band.Type: GrantFiled: March 30, 2012Date of Patent: November 24, 2015Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Min-Han Chuang, Chia-Chu Lai, Bo-Shiang Fang, Ho-Chuan Lin, Sung-Chun Wu
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Publication number: 20150188510Abstract: A circuit structure is provided, which includes: a first circuit portion having at least a capacitor; a first dielectric portion combined with the first circuit portion; a second circuit portion electrically connected to the first circuit portion and having at least an inductor; and a second dielectric portion combined with the second circuit portion, wherein the first dielectric portion has a greater dielectric constant than the second dielectric portion, thereby increasing the capacitance value and density and causing the inductor to have a high enough Q value.Type: ApplicationFiled: March 14, 2014Publication date: July 2, 2015Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTDInventors: Ho-Chuan Lin, Chia-Chu Lai, Min-Han Chuang, Li-Fang Lin, Ming-Fan Tsai
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Patent number: 9054670Abstract: A cross-coupled bandpass filter includes first, second and third resonators such that a positive mutual inductance is generated between the first and third resonators and mutual inductance generated between the first and second resonators and mutual inductance generated between the second and third resonators have the same polarity, thereby generating a transmission zero in a high frequency rejection band.Type: GrantFiled: August 17, 2012Date of Patent: June 9, 2015Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Min-Han Chuang, Chia-Chu Lai, Bo-Shiang Fang, Ho-Chuan Lin, Li-Fang Lin
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Publication number: 20140320374Abstract: A multi bandwidth balun is provided, including a main signal port, a main inductor electrically connected to the main signal port, a first inductor inducted mutually with the main inductor to constitute a first inductor of a first conversion circuit, a first capacitor module connected in parallel to the first conversion circuit, two first signal ports electrically connected to the first capacitor module, a first main capacitor electrically connected to the first signal port and the first capacitor module therebetween, a second inductor inducted mutually with the main inductor to constitute a second inductor of a second conversion circuit, a second capacitor module connected in parallel to the second conversion circuit, two second signal ports electrically connected to the second capacitor module, and a second main capacitor electrically connected to the second signal port and the second capacitor module therebetween.Type: ApplicationFiled: November 26, 2013Publication date: October 30, 2014Applicant: Siliconware Precision Industries Co., LtdInventors: Chia-Chu Lai, Min-Han Chuang, Bo-Shiang Fang, Ho-Chuan Lin, Li-Fang Lin
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Publication number: 20140204806Abstract: A duplexer is provided, which includes a first, a second and a third signal ports; a first filter and a second filter. The first filter has first, second, and third resonant circuits that have first, second and third inductors, respectively. The first, second and third inductors are mutually inductive. The first and third resonant circuits are electrically connected to the first and second signal ports, respectively. The second filter has fourth, fifth and sixth resonant circuits that have fourth, fifth and sixth inductors, respectively. The fourth resonant circuit is connected in series with the first resonant circuit. The fifth inductor and the fourth inductor are mutually inductive. The sixth resonant circuit is electrically connected to the third signal port. The second filter further has a main capacitor connected in series with the fifth and sixth resonant circuits respectively and located therebetween.Type: ApplicationFiled: May 2, 2013Publication date: July 24, 2014Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Min-Han Chuang, Chia-Chu Lai, Bo-Shiang Fang, Ho-Chuan Lin, Yen-Yu Chen
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Publication number: 20140184261Abstract: A testing method is provided, including providing a testing apparatus including a carrier member and a testing element, the carrier member comprising a first surface, a second surface opposing the first surface, and an elastic conductive area defined on the first surface; disposing an object-to-be-tested on the elastic conductive area; electrically connecting the testing element to the object-to-be-tested and the carrier member, to form an electric loop among the carrier member, the object-to-be-tested and the testing element. Through the design of the elastic conductive area, the object-to-be-tested can be secured with a small pressure applied thereto, and is prevented from being cracked.Type: ApplicationFiled: October 17, 2013Publication date: July 3, 2014Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Chia-Chu Lai, Ming-Fan Tsai, Ho-Chuan Lin, Min-Han Chuang, Bo-Shiang Fang
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Publication number: 20140124950Abstract: A semiconductor substrate is disclosed. The semiconductor substrate includes a substrate body having at least an opening formed on a surface thereof, wherein the surface of the substrate body and a wall of the opening are made of an insulating material; and a circuit layer formed on the surface of the substrate body, wherein the circuit layer covers an end of the opening and is electrically insulated from the opening. The opening facilitates to increase the thickness of the insulating structure between the circuit layer and the substrate body of a silicon material to prevent signal degradation when high frequency signals are applied to the circuit layer.Type: ApplicationFiled: January 30, 2013Publication date: May 8, 2014Applicant: Siliconware Precision Industries Co., Ltd.Inventors: Bo-Shiang Fang, Ho-Chuan Lin, Chia-Chu Lai, Min-Han Chuang, Li-Fang Lin
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Publication number: 20130154765Abstract: A cross-coupled bandpass filter includes first, second, third and fourth resonators such that magnetic couplings are generated between the first and second resonators, between the third and fourth resonators and between the first and fourth resonators, a capacitive coupling is generated between the second and third resonators, and the magnetic coupling between the first and fourth resonators has a polarity opposite to that of the capacitive coupling between the second and third resonators, thereby generating two transmission zeros in a transmission rejection band.Type: ApplicationFiled: March 30, 2012Publication date: June 20, 2013Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Min-Han Chuang, Chia-Chu Lai, Bo-Shiang Fang, Ho-Chuan Lin, Sung-Chun Wu
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Publication number: 20130141187Abstract: A cross-coupled bandpass filter includes first, second and third resonators such that a positive mutual inductance is generated between the first and third resonators and mutual inductance generated between the first and second resonators and mutual inductance generated between the second and third resonators have the same polarity, thereby generating a transmission zero in a high frequency rejection band.Type: ApplicationFiled: August 17, 2012Publication date: June 6, 2013Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Min-Han Chuang, Chia-Chu Lai, Bo-Shiang Fang, Ho-Chuan Lin, Li-Fang Lin