Patents by Inventor Min-Hao Yeh

Min-Hao Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7510974
    Abstract: A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: March 31, 2009
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Yueh Li, Kai-Chun Yang, Tzu-Yi Chuang, Chien-Hsuan Chen, Min-Hao Yeh
  • Publication number: 20090023362
    Abstract: A retaining ring for CMP is disclosed. The retaining ring has a plurality of grooves. The grooves have rounded sidewalls. Because the sidewalls of the grooves of the retaining ring are rounded, the slurry is not apt to accumulate around them and the pad is less scratched. Accordingly, the micro-scratches on the wafer surface are reduced and the yield of the CMP step is increased. Its operational method and application system are also disclosed in this invention.
    Type: Application
    Filed: July 17, 2007
    Publication date: January 22, 2009
    Inventors: Tzu-Shin Chen, Chih-Chin Yang, Min-Hao Yeh, Kai-Chun Yang, Chan Lu, Tzu-Hui Wu, Cheng-Hsun Wu
  • Publication number: 20070259525
    Abstract: A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.
    Type: Application
    Filed: May 5, 2006
    Publication date: November 8, 2007
    Inventors: Chih-Yueh Li, Kai-Chun Yang, Tzu-Yi Chuang, Chien-Hsuan Chen, Min-Hao Yeh