Abstract: A printed circuit board includes a core layer, a plurality of conductive pattern layers disposed on one side and the other side of the core layer, a plurality of insulating layers disposed on the one side and the other side of the core layer, and a plurality of via layers disposed on the one side and the other side of the core layer. The printed circuit board has a wiring region and a dummy region surrounding at least a portion outside of the wiring region on a plane. A metal ratio in the dummy region on one side and a metal ratio in the dummy region on the other side are different from each other.

Abstract: A polishing slurry including a fullerene derivative and at least one compound having at least one positively-charged functional group, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A printed circuit board includes a core layer, a plurality of conductive pattern layers disposed on one side and the other side of the core layer, a plurality of insulating layers disposed on the one side and the other side of the core layer, and a plurality of via layers disposed on the one side and the other side of the core layer. The printed circuit board has a wiring region and a dummy region surrounding at least a portion outside of the wiring region on a plane. A metal ratio in the dummy region on one side and a metal ratio in the dummy region on the other side are different from each other.

Abstract: A chemical mechanical polishing method including preparing a polishing pad including a polishing surface having an elastic modulus at room temperature of about 300 MPa to about 400 MPa, positioning a semiconductor structure having a surface, wherein the surface and the polishing surface of the polishing pad face each other, supplying polishing slurry including nano-abrasive having an average particle diameter of less than about 10 nm between the surface of the semiconductor structure and the polishing surface of the polishing pad, and contacting the surface of the semiconductor structure with the polishing surface of the polishing pad to polish the surface with the polishing slurry. A method of manufacturing a semiconductor device including the the chemical mechanical polishing method, a polishing pad used in the method, and a chemical mechanical polishing device.

Abstract: Disclosed herein is a substrate processing device, including: a first mask disposed over a base substrate and provided with a first opening which exposes a connection pad of the base substrate; a first squeeze inserting a flux ball into a first opening of the first mask; and a first heating means heating a flux ball which is disposed on the connection pad.