Abstract: A defect inspection system includes a stage configured to receive a measurement target thereon, wherein the measurement target includes a first layer and a second layer disposed under the first layer; and a defect inspection apparatus including: a light source unit configured to output first incident light and second incident light; a beam splitter configured to reflect the first incident light and the second incident light from the first light source to the measurement target, and transmit first reflected light and second reflected light therethrough, wherein the first reflected light corresponds to the first incident light reflected from the first layer and the second reflected light corresponds to the second incident light reflected from the second layer; an objective lens disposed between the beam splitter and the measurement target; and a detector configured to: detect the first reflected light and generate a first image of the first layer based on the detected first reflected light; and detect the secon

Abstract: A method for manufacturing a semiconductor device includes generating light, modulating power of the light to generate power-modulated light, acquiring an image signal of a measurement target using the power-modulated light, filtering the image signal to separate a real signal and a false signal, analyzing the measurement target using the real signal, and performing a semiconductor process on the measurement target based analyzing the measurement target using the real signal, wherein filtering the image signal includes classifying a first component of the image signal that is dependent on power of the power-modulated light as the real signal, and classifying a second component of the image signal that is independent of the power of the power-modulated light as the false signal.

Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.

Abstract: A semiconductor device inspecting apparatus includes a light source for emitting light to a semiconductor pattern. The semiconductor pattern includes a structure that reflects the light from the light source. The semiconductor device inspecting apparatus further includes an objective optical system disposed in a path of the reflected light from the semiconductor pattern, and a first noise filter disposed in a path of the reflected light having passed through the objective optical system, the first noise filter including at least one bar pattern that filters a diffraction noise of the light. The semiconductor device inspecting apparatus additionally includes a second noise filter disposed in a path of the filtered light from the first noise filter, the second noise filter including an outer frame surrounding a central portion. The semiconductor device inspecting apparatus further includes a first photodetector detecting the light having passed through the second noise filter.

Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.

Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.