Abstract: A method for controlling a device for automatically adjusting an airway opening body position is provided. The device includes a horizontal base plate, a head support block, a back support plate, a neck support apparatus, a head cover assembly, and a programmable logic controller (PLC). The neck support apparatus is positioned between the head support block and the back support plate. The PLC is configured to controls a stroke of an electric cylinder according to the following equations: ?=1.235?+?, and ?=KX+B+C, where ? is a body position angle, the body position angle is an angle between a positive projection line of a connecting line from a mandibular angle to an external acoustic meatus on a symmetrical surface of a human body and the back support plate, and ? is a preset value ranging from 90° to 100°.

Abstract: A method includes forming a transistor, which includes forming a dummy gate stack over a semiconductor region, and forming an Inter-Layer Dielectric (ILD). The dummy gate stack is in the ILD, and the ILD covers a source/drain region in the semiconductor region. The method further includes removing the dummy gate stack to form a trench in the first ILD, forming a low-k gate spacer in the trench, forming a replacement gate dielectric extending into the trench, forming a metal layer to fill the trench, and performing a planarization to remove excess portions of the replacement gate dielectric and the metal layer to form a gate dielectric and a metal gate, respectively. A source region and a drain region are then formed on opposite sides of the metal gate.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source electrode and the drain electrode are disposed over the semiconductor layer.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a soruce/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.