Abstract: A button-type secondary battery includes a lower can having a bottom surface; an upper can having a top, the upper can and the lower can being coupled to define a space therein; an electrolyte in the space; an electrode assembly in the space and including a negative electrode, a separator, and a positive electrode wound together; a gasket between the upper can and the lower can to electrically insulate the upper and lower cans; a top insulator that is electrically insulating and covering a top surface of the electrode assembly; and a bottom insulator that is electrically insulating and covering a bottom surface of the electrode assembly. The top and bottom insulators are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one of the top insulator and the bottom insulator are coated with a protective layer to prevent thermal shrinkage from occurring.

Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.

Abstract: A positive electrode active material, a method of preparing the same, and a positive electrode and lithium secondary battery including the same are disclosed herein. In some embodiments, a positive electrode active material includes a lithium transition metal oxide which contains 60 mol % or more of nickel based on a total number of moles of transition metals excluding lithium in the lithium transition metal oxide, wherein the oxide is in a form of a secondary particle which is an aggregate of primary particles, wherein the lithium transition metal oxide satisfies Equation 1: 1 ? x y ? 20 Wherein x is a minimum area of a rectangle including all pores having an area greater than 0.002 ?m2 among closed pores distributed in the secondary particle, and y is a total sum of areas of the pores having an area greater than 0.002 ?m2 among the closed pores distributed in the secondary particle.

Abstract: Provided is a pattern forming apparatus which may form a pattern on a substrate with high precision by using a material including an organic material, the pattern forming apparatus including: a capillary facing a grounded substrate and capable of storing a solution including a sample; a power source applying a voltage to the capillary; a stencil mask disposed between the capillary and the substrate, and including an opening through which the sample passes; and a cross-direction actuator moving the stencil mask in a cross direction crossing a direction in which the sample passes.

Abstract: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of existing printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which are often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques cannot be used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.

Abstract: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of exiting printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques can not used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.

Abstract: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of existing printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques can not used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.

Abstract: The present invention relates to a technology for printing a thin film transistor (TFT) using single walled carbon nanotubes coated with dielectric substance having a thickness of several nm and thus capable of improving significantly a low on/off ratio of an existing single walled carbon nanotube TFT.

Abstract: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of exiting printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques can not used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.