Abstract: A backlight module includes a housing, a light source, at least one supporting member, a diffuser plate, and an optical film. The housing includes a backplate portion, a sidewall portion, and a panel mounting platform. The sidewall portion is arranged along a periphery of the backplate portion. The panel mounting platform is connected and bent relative to the sidewall portion, such that the panel mounting platform, the sidewall portion, and the backplate portion form a concavity. The light source is disposed on the backplate portion. The supporting member is disposed in the housing and at least partially located in the concavity. The optical film and the diffuser plate are stacked on the supporting member. The supporting member has a reflective incline structure that is configured to directly reflect light traveling towards an inner side surface of the housing towards the diffuser plate.

Abstract: A backlight module includes a housing, a light source, at least one supporting member, a diffuser plate, and an optical film. The housing includes a backplate portion, a sidewall portion, and a panel mounting platform. The sidewall portion is arranged along a periphery of the backplate portion. The panel mounting platform is connected and bent relative to the sidewall portion, such that the panel mounting platform, the sidewall portion, and the backplate portion form a concavity. The light source is disposed on the backplate portion. The supporting member is disposed in the housing and at least partially located in the concavity. The optical film and the diffuser plate are stacked on the supporting member. The supporting member has a reflective incline structure that is configured to directly reflect light traveling towards an inner side surface of the housing towards the diffuser plate.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.

Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.