Abstract: There is provided an engineering change order (ECO) cell, which includes: a function circuit including at least one PMOS transistor with a P-diffusion layer and a first poly gate, at least one NMOS transistor with an N-diffusion layer and a second poly gate; a first power layer supplying the at least one PMOS transistor with a first power voltage; and a second power layer supplying the at least one NMOS transistor with a second power voltage. The first poly gate of the PMOS transistor is isolated from the second poly gate of the NMOS transistor.

Abstract: Embodiments relate to a level shifter which uses a single voltage source, has an excellent operation characteristic even when a difference between a low voltage and a high voltage is large, and can be easily designed. Embodiments relate to a level shifter for shifting a voltage level between an input terminal connected to a circuit block which operates by a low voltage source and an output terminal connected to a circuit block which operates by a high voltage source. In embodiments, the level shifter may include a pull-up PMOS and a pull-down NMOS, both of which are connected between the high voltage source and ground in the form of an inverter and have an output node connected to the output terminal. The level shifter may include a control node which is connected to inputs of the pull-up and pull-down NMOS in the form of the inverter. The level shifter may have an input gate for connecting the control node to the high voltage source or ground according to a voltage level of the input terminal.

Abstract: Embodiments relate to a current mode logic circuit, which may include a first NMOS transistor whose drain may be coupled to a first load and whose gate may be coupled to an input terminal through which data may be inputted, a second NMOS transistor whose drain may be coupled to a second load and gate may be coupled to an input terminal through which a negative reference voltage may be applied, and a third NMOS transistor whose drain may be coupled to a source of each of the first and the second NMOS transistors and whose gate may be coupled to an input terminal through which a reference voltage may be applied. Bulk biases of the first, second, and third NMOS transistors may be independently adjusted to control at least one of a leakage current and an operation speed of the NMOS transistors.

Abstract: Disclosed is a multi-threshold CMOS (MTCMOS) flip-flop circuit. The MTCMOS flip-flop circuit includes a data input unit including an inverter for receiving an input data signal, inverting the input data signal and then outputting an inverted data signal; a clock signal generator including an inverter for receiving an input clock signal and a logic gate for generating a pulsed clock for latching the inverted data signal at a rising time of the input clock signal; a data transmitting unit including a switch for receiving the data signal output from the data input unit to selectively output the inverted data signal and controlling transmission of data based on the pulsed clock; and a data latch and output unit including a feedback inverter having a feedback path used for data latch so as to receive the inverted data signal and generate an output Q.

Abstract: Embodiments relate to a level shifter which uses a single voltage source, has an excellent operation characteristic even when a difference between a low voltage and a high voltage is large, and can be easily designed. Embodiments relate to a level shifter for shifting a voltage level between an input terminal connected to a circuit block which operates by a low voltage source and an output terminal connected to a circuit block which operates by a high voltage source. In embodiments, the level shifter may include a pull-up PMOS and a pull-down NMOS, both of which are connected between the high voltage source and ground in the form of an inverter and have an output node connected to the output terminal. The level shifter may include a control node which is connected to inputs of the pull-up and pull-down NMOS in the form of the inverter. The level shifter may have an input gate for connecting the control node to the high voltage source or ground according to a voltage level of the input terminal.

Abstract: There is provided an engineering change order (ECO) cell, which includes: a function circuit including at least one PMOS transistor with a P-diffusion layer and a first poly gate, at least one NMOS transistor with an N-diffusion layer and a second poly gate; a first power layer supplying the at least one PMOS transistor with a first power voltage; and a second power layer supplying the at least one NMOS transistor with a second power voltage. The first poly gate of the PMOS transistor is isolated from the second poly gate of the NMOS transistor.

Abstract: The present invention has been made in view of the above mentioned problem, and the present invention provides a sticky signal generator for rapidly generating a sticky signal with a small layout area which uses a shift register of which the size is equal to the size of the inputted operand data.

Abstract: In a mixed voltage input buffer for managing mixed voltages in a semiconductor device which uses various voltages, includes a transmission unit for inputting a given signal and transmitting the input signal according to an enable signal, and a voltage level conversion unit for inputting an output signal of the transmission unit and converting its voltage level into a voltage level of an inner core power and then outputting it.

Abstract: In accordance with the present invention, there is provided a dual channel FIFO circuit to perform bidirectional data transfer under the control of a host computer between a host interface and a small computer system interface, comprising: a first multiplexing means for selecting one of the data from said host interface and the data from said small computer system interface; a single ported SRAM for storing the selected data by said first multiplexing means and outputting the data, which are indicated by pointers, according to the requests from said host interface or said small computer system interface; a second multiplexing means for selecting one of the data from said single ported SRAM and the data from said small computer system interface; a first staging memory means for storing the data to be outputted to said host interface; and a second staging memory means for storing the selected data by said second multiplexing means and transferring them to said second multiplexing means and said small computer s