Abstract: Proposed is a method for product recommendation by a server. The method may include receiving a gift recommendation request from a first user terminal for a second user, checking available basic information of the second user, and determining a first recommendation information based on the basic information, wherein the first recommendation information comprises a first recommendation reason and at least one product related to the first recommendation reason. The method may also include determining a second recommendation information not based on the basic information, wherein the second recommendation information comprises a second recommendation reason and at least one product related to the second recommendation reason. The method may further include providing recommendation information comprising the first and second recommendation information to the first user terminal. The first recommendation information may be prioritized for display over the second recommendation information.

Abstract: An etchant composition includes: an inorganic acid compound at 9.0 wt % to 9.9 wt %; an inorganic salt compound at 5.0 wt % to 10.0 wt %; an organic acid compound at 35 wt % to 45 wt %; a lactate-based compound at 10 wt % to 20 wt %; a nitrogen cyclic compound containing oxygen at 0.1 wt % to 1.0 wt %; and a remaining amount of water such that a total weight of the etchant composition is 100 wt %, wherein the inorganic acid compound is an etchant composition having an acid dissociation constant (pKa) value of ?1.0 to ?3.0.

Abstract: The present invention relates to a vesicle containing a saccharide isomerate, a hydrolyzed lupine protein, and an intercorneocyte lipid mimetics as an active ingredient, and a composition for skin external application including the vesicle, and more particularly, to a vesicle including: an aqueous phase part including a saccharide isomerate and a hydrolyzed lupine protein; and an oil phase part including an intercorneocyte lipid mimetics, lysolecithin, and glycerin. The vesicle includes the intercorneocyte lipid mimetics together with the saccharide isomerate and the hydrolyzed lupine protein as contents, so that the vesicle is excellent in a skin barrier recovery function and a skin moisturizing effect upon skin application. In addition, the vesicle is excellent in phase stability, so that the vesicle is suitable to be commercialized as various compositions for skin external application.

Abstract: The present invention relates to a vesicle containing a saccharide isomerate, a hydrolyzed lupine protein, and an intercorneocyte lipid mimetics as an active ingredient, and a composition for skin external application including the vesicle, and more particularly, to a vesicle including: an aqueous phase part including a saccharide isomerate and a hydrolyzed lupine protein; and an oil phase part including an intercorneocyte lipid mimetics, lysolecithin, and glycerin. The vesicle includes the intercorneocyte lipid mimetics together with the saccharide isomerate and the hydrolyzed lupine protein as contents, so that the vesicle is excellent in a skin barrier recovery function and a skin moisturizing effect upon skin application. In addition, the vesicle is excellent in phase stability, so that the vesicle is suitable to be commercialized as various compositions for skin external application.

Abstract: Provided are, among others, memory circuits or devices and their applications in electronic devices or systems and various implementations of an electronic device which includes two variable resistance elements in each storage cell, thereby increasing margin and speed of a read operation. One disclosed electronic device includes a semiconductor memory unit which, in one implementation, in addition to two variable resistance elements, further includes a bit line and a bit line bar formed at a metal level; a first word line formed at a transistor level lower than the metal level, and extended in a direction perpendicular to the bit line or the bit line bar; a first selecting element formed at the transistor level and coupled to the bit line and the first word line; a second selecting element formed at the transistor level and coupled to the bit line bar and the first word line.

Abstract: Provided are, among others, memory circuits or devices and their applications in electronic devices or systems and various implementations of an electronic device which includes two variable resistance elements in each storage cell, thereby increasing margin and speed of a read operation. One disclosed electronic device includes a semiconductor memory unit which, in one implementation, in addition to two variable resistance elements, further includes a bit line and a bit line bar formed at a metal level; a first word line formed at a transistor level lower than the metal level, and extended in a direction perpendicular to the bit line or the bit line bar; a first selecting element formed at the transistor level and coupled to the bit line and the first word line; a second selecting element formed at the transistor level and coupled to the bit line bar and the first word line.

Abstract: Provided is an electronic device including a semiconductor memory unit. The semiconductor memory unit may include one or more storage cells for storing data, and each of the storage cells includes: a first resistance variable element having a first resistance value when a first value is stored therein, and having a second resistance value when a second value is stored therein; and a second resistance variable element having the second resistance value when the first value is stored therein, and having the first resistance value when the second value is stored therein.