Patents by Inventor Min-Hyuk NIM

Min-Hyuk NIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ORGANOMETALLIC COMPOUND, PRECURSOR COMPOSITION COMPRISING SAME, AND METHOD FOR MANUFACTURING THIN FILM USING SAME
    Publication number: 20230257406
    Abstract: The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.
    Type: Application
    Filed: August 3, 2020
    Publication date: August 17, 2023
    Inventors: Hyo-Suk KIM, Min-Sung PARK, Min-Hyuk NIM, Jang-Hyeon SEOK, Jung-Woo PARK
  • Silicon precursor and method of manufacturing silicon-containing thin film using the same
    Patent number: 11267828
    Abstract: The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: March 8, 2022
    Assignee: Hansol Chemical Co., Ltd.
    Inventors: Jae-Seok An, Jong-Ryul Park, Min-Hyuk Nim, Jang-Hyeon Seok, Jung Woo Park
  • SILICON PRECURSOR AND METHOD OF MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
    Publication number: 20210277031
    Abstract: The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
    Type: Application
    Filed: April 24, 2019
    Publication date: September 9, 2021
    Inventors: Jae-Seok AN, Jong-Ryul PARK, Min-Hyuk NIM, Jang-Hyeon SEOK, Jung Woo PARK