Abstract: A display device comprises a substrate, a semiconductor layer thereon, a first insulating layer on the semiconductor layer, a first conductive layer on the first insulating layer and including a first electrode pattern, a second insulating layer on the first insulating layer and including first and second conductive patterns, a third insulating layer on the second conductive layer, and a display element layer on the third insulating layer and including a first pixel electrode connected to the first conductive pattern through a first via hole, a second pixel electrode connected to the second conductive pattern through a second via hole, and a micro light-emitting element between the pixel electrodes, the first conductive pattern contacting the semiconductor layer through a first contact hole and the first electrode pattern through a second contact hole, and the second conductive pattern overlapping the first electrode pattern to form a first capacitor therewith.

Abstract: A pixel including: a light emitting element; a first transistor connected between a first power source and a second node; a first capacitor connected to a first node or a second node and a third node; a second transistor between the third node and a data line, the second transistor turned on by a first scan signal; a third transistor between the first and second nodes, the third transistor turned on by a second scan signal; a fifth transistor between the first power source and the first transistor, the fifth transistor turned on by a first emission control signal; a sixth transistor between the second node and the light emitting element, the sixth transistor turned on by a second emission control signal; and an eighth transistor between the second node and a second emission control line, the eighth transistor turned on by a fourth scan signal.

Abstract: A display apparatus includes a base substrate including a display region and a peripheral region that is a non-display region surrounding the display region, a plurality of data lines disposed in the display region on the base substrate and extending to the peripheral region, a bypass data line disposed in the display region and the peripheral region on the base substrate and electrically connected to at least one of the data lines, and a dummy pattern spaced apart from the bypass data line and disposed on a same layer as the bypass data line.

Abstract: A display device includes a light-emitting diode including a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor; a first voltage line to which a first voltage is applied; a second voltage line to which a second voltage is applied; a first transistor including a source electrode electrically connected to the first voltage line and a drain electrode electrically connected to a first electrode of the light-emitting diode and to the first conductivity-type semiconductor; a second transistor including a drain electrode electrically connected to a gate electrode of the first transistor and a source electrode electrically connected to a data line to apply a data signal; a capacitor electrically connected to the gate electrode of the first transistor and the first electrode; and a third transistor including a source electrode electrically connected to the second voltage line and a drain electrode electrically connected to the first electrode.

Abstract: An image forming apparatus includes: an image carrier unit that includes an image carrier and is configured to be capable of being housed in and removed from an image-forming-apparatus main body; an exposure device that is arranged close to the image carrier to form an electrostatic latent image; a retracting mechanism that holds the exposure device close to the image carrier when the image carrier unit is housed in the image-forming-apparatus main body, and holds the exposure device away from the image carrier when the image carrier unit is being removed from the image-forming-apparatus main body; a covering member that covers the retracting mechanism in a state where backlash of the exposure device at least in a main-scanning direction is allowed; and a guide mechanism that positions the exposure device in the main-scanning direction when the exposure device comes closer to the image carrier through the retracting mechanism.

Abstract: An image forming apparatus includes: an image carrier unit that includes an image carrier and is configured to be capable of being housed in and removed from an image-forming-apparatus main body; an exposure device that is arranged close to the image carrier to form an electrostatic latent image; a retracting mechanism that holds the exposure device close to the image carrier when the image carrier unit is housed in the image-forming-apparatus main body, and holds the exposure device away from the image carrier when the image carrier unit is being removed from the image-forming-apparatus main body; a covering member that covers the retracting mechanism in a state where backlash of the exposure device at least in a main-scanning direction is allowed; and a guide mechanism that positions the exposure device in the main-scanning direction when the exposure device comes closer to the image carrier through the retracting mechanism.

Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.

Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.