Patents by Inventor Min-jae Chung
Min-jae Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9188901Abstract: An image forming apparatus includes: an image carrier unit that includes an image carrier and is configured to be capable of being housed in and removed from an image-forming-apparatus main body; an exposure device that is arranged close to the image carrier to form an electrostatic latent image; a retracting mechanism that holds the exposure device close to the image carrier when the image carrier unit is housed in the image-forming-apparatus main body, and holds the exposure device away from the image carrier when the image carrier unit is being removed from the image-forming-apparatus main body; a covering member that covers the retracting mechanism in a state where backlash of the exposure device at least in a main-scanning direction is allowed; and a guide mechanism that positions the exposure device in the main-scanning direction when the exposure device comes closer to the image carrier through the retracting mechanism.Type: GrantFiled: November 4, 2013Date of Patent: November 17, 2015Assignee: Ricoh Company, LimitedInventors: Kenji Nakamura, Kohta Sakaya, Kuniyori Takano, Jong Ho Park, Min Jae Chung
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Publication number: 20140147166Abstract: An image forming apparatus includes: an image carrier unit that includes an image carrier and is configured to be capable of being housed in and removed from an image-forming-apparatus main body; an exposure device that is arranged close to the image carrier to form an electrostatic latent image; a retracting mechanism that holds the exposure device close to the image carrier when the image carrier unit is housed in the image-forming-apparatus main body, and holds the exposure device away from the image carrier when the image carrier unit is being removed from the image-forming-apparatus main body; a covering member that covers the retracting mechanism in a state where backlash of the exposure device at least in a main-scanning direction is allowed; and a guide mechanism that positions the exposure device in the main-scanning direction when the exposure device comes closer to the image carrier through the retracting mechanism.Type: ApplicationFiled: November 4, 2013Publication date: May 29, 2014Applicant: RICOH COMPANY, LIMITEDInventors: Kenji NAKAMURA, Kohta SAKAYA, Kuniyori TAKANO, Jong Ho PARK, Min Jae CHUNG
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Patent number: 7094702Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.Type: GrantFiled: May 21, 2003Date of Patent: August 22, 2006Assignee: Sungkyunkwan UniversityInventors: Geun-young Yeom, Min-jae Chung, Do-haing Lee, Sung-min Cho, Sae-hoon Chung
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Patent number: 6926799Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.Type: GrantFiled: February 28, 2002Date of Patent: August 9, 2005Assignee: Sungkyunkwan UniversityInventors: Geun-young Yeom, Do-haing Lee, Min-jae Chung
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Patent number: 6874443Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.Type: GrantFiled: February 28, 2002Date of Patent: April 5, 2005Assignee: Sungkyunkwan UniversityInventors: Geun-young Yeom, Min-jae Chung, Do-haing Lee, Sung-min Cho, Sae-hoon Chung
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Publication number: 20030209519Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.Type: ApplicationFiled: May 21, 2003Publication date: November 13, 2003Inventors: Geun-Young Yeom, Min-Jae Chung, Do-Haing Lee, Sung-Min Cho, Sae-Hoon Chung
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Publication number: 20030098291Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.Type: ApplicationFiled: February 28, 2002Publication date: May 29, 2003Inventors: Geun-Young Yeom, Min-Jae Chung, Do-Haing Lee, Sung-Min Cho, Sae-Hoon Chung
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Publication number: 20030098126Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.Type: ApplicationFiled: February 28, 2002Publication date: May 29, 2003Inventors: Geun-young Yeom, Do-haing Lee, Min-jae Chung