Patents by Inventor Min-jae Chung

Min-jae Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9188901
    Abstract: An image forming apparatus includes: an image carrier unit that includes an image carrier and is configured to be capable of being housed in and removed from an image-forming-apparatus main body; an exposure device that is arranged close to the image carrier to form an electrostatic latent image; a retracting mechanism that holds the exposure device close to the image carrier when the image carrier unit is housed in the image-forming-apparatus main body, and holds the exposure device away from the image carrier when the image carrier unit is being removed from the image-forming-apparatus main body; a covering member that covers the retracting mechanism in a state where backlash of the exposure device at least in a main-scanning direction is allowed; and a guide mechanism that positions the exposure device in the main-scanning direction when the exposure device comes closer to the image carrier through the retracting mechanism.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: November 17, 2015
    Assignee: Ricoh Company, Limited
    Inventors: Kenji Nakamura, Kohta Sakaya, Kuniyori Takano, Jong Ho Park, Min Jae Chung
  • Publication number: 20140147166
    Abstract: An image forming apparatus includes: an image carrier unit that includes an image carrier and is configured to be capable of being housed in and removed from an image-forming-apparatus main body; an exposure device that is arranged close to the image carrier to form an electrostatic latent image; a retracting mechanism that holds the exposure device close to the image carrier when the image carrier unit is housed in the image-forming-apparatus main body, and holds the exposure device away from the image carrier when the image carrier unit is being removed from the image-forming-apparatus main body; a covering member that covers the retracting mechanism in a state where backlash of the exposure device at least in a main-scanning direction is allowed; and a guide mechanism that positions the exposure device in the main-scanning direction when the exposure device comes closer to the image carrier through the retracting mechanism.
    Type: Application
    Filed: November 4, 2013
    Publication date: May 29, 2014
    Applicant: RICOH COMPANY, LIMITED
    Inventors: Kenji NAKAMURA, Kohta SAKAYA, Kuniyori TAKANO, Jong Ho PARK, Min Jae CHUNG
  • Patent number: 7094702
    Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.
    Type: Grant
    Filed: May 21, 2003
    Date of Patent: August 22, 2006
    Assignee: Sungkyunkwan University
    Inventors: Geun-young Yeom, Min-jae Chung, Do-haing Lee, Sung-min Cho, Sae-hoon Chung
  • Patent number: 6926799
    Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: August 9, 2005
    Assignee: Sungkyunkwan University
    Inventors: Geun-young Yeom, Do-haing Lee, Min-jae Chung
  • Patent number: 6874443
    Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: April 5, 2005
    Assignee: Sungkyunkwan University
    Inventors: Geun-young Yeom, Min-jae Chung, Do-haing Lee, Sung-min Cho, Sae-hoon Chung
  • Publication number: 20030209519
    Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.
    Type: Application
    Filed: May 21, 2003
    Publication date: November 13, 2003
    Inventors: Geun-Young Yeom, Min-Jae Chung, Do-Haing Lee, Sung-Min Cho, Sae-Hoon Chung
  • Publication number: 20030098291
    Abstract: A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.
    Type: Application
    Filed: February 28, 2002
    Publication date: May 29, 2003
    Inventors: Geun-Young Yeom, Min-Jae Chung, Do-Haing Lee, Sung-Min Cho, Sae-Hoon Chung
  • Publication number: 20030098126
    Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.
    Type: Application
    Filed: February 28, 2002
    Publication date: May 29, 2003
    Inventors: Geun-young Yeom, Do-haing Lee, Min-jae Chung