Patents by Inventor Min-ji Jung
Min-ji Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128605Abstract: Provided are an electrode assembly, a battery, and a battery pack and vehicle including the same. An electrode assembly, in which a first electrode, a second electrode, and a separator interposed therebetween are wound about an axis to define a core and an outer circumferential surface. At least one of the first electrode and the second electrode includes, at a long side end portion, an uncoated portion exposed beyond the separator in a direction of the axis. At least a part of the uncoated portion is bent in a radial direction of the electrode assembly to define a bent surface region having overlapping layers of the uncoated portion. The bent surface region includes a welding target region having a number of the overlapping layers of the uncoated portion, and the welding target region extends along a radial direction of the electrode assembly.Type: ApplicationFiled: February 18, 2022Publication date: April 18, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Min-Woo KIM, Do-Gyun KIM, Kyung-Wook CHO, Geon-Woo MIN, Min-Ki JO, Jae-Woong KIM, Kwang-Su HWANGBO, Hae-Jin LIM, Su-Ji CHOI, Jae-Won LIM, Hak-Kyun KIM, Je-Jun LEE, Ji-Min JUNG
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Publication number: 20240128554Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.Type: ApplicationFiled: October 14, 2022Publication date: April 18, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Yeong Hun JUNG, Young Ji TAE, Joo Hwan SUNG, Min Su CHO, Geun Young PARK, Min Gyu KIM, Min Seon KIM, Sang Hak CHAE, Min Young JU
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Patent number: 11956998Abstract: A display device includes: a first substrate including a pixel area and a transmissive area; a thin-film transistor on the first substrate; a planarization layer on the thin-film transistor; a first light emitting electrode on the planarization layer; a bank covering a part of the first light emitting electrode; a light emitting layer on the first light emitting electrode; and a second light emitting electrode on the light emitting layer and the bank. The transmissive area includes a transmissive hole penetrating the bank and the planarization layer.Type: GrantFiled: January 4, 2023Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Se Wan Son, Moo Soon Ko, Rae Young Gwak, Jin Seock Ma, Min Jeong Park, Ki Bok Yoo, So La Lee, Jin Goo Jung, Jong Won Chae, Ye Ji Han
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Publication number: 20240071564Abstract: In embodiments of the present disclosure, disclosure is an immunogenicity prediction method comprising the steps of: acquiring information about synthetic long peptides for treating carcinoma in a subject through an immunogenicity prediction device; processing the synthetic long peptides by one processing method of embedding, one-hot encoding, and BLOSUM through the immunogenicity prediction device, and outputting one or more antigen feature values based on the processed data; inputting the cleavage probability vector for each position of the synthetic long peptides through the immunogenicity prediction device to output one or more cleavage feature values; inputting a neoantigen peptide sequence, an HLA class I sequence, an HLA class II sequence within the synthetic long peptides through the immunogenicity prediction device to output one or more neoantigen feature values related to the immunity and binding affinity to the neoantigen peptide sequence; and outputting an immunogenicity score of the neoantigen peType: ApplicationFiled: April 28, 2023Publication date: February 29, 2024Inventors: Tae soon HWANG, Soon Myung PAIK, Seong Eui HONG, Hae Suk KIM, Eon Ji NOH, Min Ho JUNG, Seong Gwang KIM, In Young KIM
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Publication number: 20230369357Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: July 20, 2023Publication date: November 16, 2023Inventors: Jung Bin Yun, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Patent number: 11817465Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: January 18, 2023Date of Patent: November 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Publication number: 20230154946Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: January 18, 2023Publication date: May 18, 2023Inventors: Jung Bin Yun, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Patent number: 11581344Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: August 11, 2021Date of Patent: February 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Publication number: 20220344384Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.Type: ApplicationFiled: November 30, 2021Publication date: October 27, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Min Ji JUNG, Doo Sik SEOL, Sung Min AN, Kyung Duck LEE, Kyung Ho LEE, Seung Ki JUNG, You Jin JEONG, Tae Sub JUNG, Jeong Jin CHO, Masato FUJITA
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Patent number: 11296134Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: GrantFiled: August 6, 2020Date of Patent: April 5, 2022Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
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Publication number: 20210375965Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: August 11, 2021Publication date: December 2, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Patent number: 11121157Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: December 12, 2019Date of Patent: September 14, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Patent number: 11011559Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: December 12, 2019Date of Patent: May 18, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Patent number: 10950639Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: December 12, 2019Date of Patent: March 16, 2021Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
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Publication number: 20200365635Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: ApplicationFiled: August 6, 2020Publication date: November 19, 2020Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
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Patent number: 10763287Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: GrantFiled: June 13, 2019Date of Patent: September 1, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
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Publication number: 20200119066Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Inventors: Jung Bin YUN, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Publication number: 20200119064Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Inventors: Jung Bin YUN, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Publication number: 20200119065Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Inventors: Jung Bin YUN, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
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Patent number: 10573676Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: January 4, 2018Date of Patent: February 25, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung