Abstract: Disclosed are a biaxial liquid crystal compound, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there is provided a liquid crystal material of a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: Disclosed is a resin composition which comprises a catalyst precursor for electroless plating to form an electromagnetic wave shielding layer. The resin composition comprises an organic polymer resin, a polyfunctional monomer having an ethylenically unsaturated bond, a photoinitiator, a silver organic complex precursor as a catalyst precursor, and an organic solvent. Further disclosed are methods for forming metal patterns using the resin composition and metal patterns formed by the methods. The methods comprise forming a pattern, reducing the pattern, and electroless plating the reduced pattern. A patterned layer of the catalyst formed using the resin composition is highly adhesive, a loss of the catalyst during a wet process is substantially prevented, and an increase in plating rate leads to the formation of a uniform, fine metal pattern after electroless plating. Electromagnetic wave shielding materials comprising the metal pattern can be used in the formation of films for shielding electromagnetic waves.

Abstract: The present invention relates to a pyran derivative which manifests appropriate refractive anisotropy (optical anisotropy) and liquid crystal transition temperature and excellent dielectric anisotropy, and has excellent compatibility with various liquid crystal compounds, and thus, can be preferably used for the formation of a liquid crystal layer of a liquid crystal display device, its preparation method, a liquid crystal composition and liquid crystal display device comprising the same.

Abstract: Disclosed are a novel fluorene derivative, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there are provided a liquid crystal material for a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio measured at an oblique angle to the front and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: Disclosed is a novel liquid crystal compound, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there is provided a liquid crystal material of a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Abstract: The present invention relates to a coating composition for a dielectric insulating film comprising a) an organosiloxane polymer, b) first metal ions selected from the group consisting of Rb ions, Cs ions, and a mixture thereof, and c) an organic solvent, in which the first metal ions are comprised at 1 to 200 ppm based on the weight of the composition, a dielectric insulating film prepared therefrom, and an electric or electronic device comprising the same. A dielectric insulating film prepared from the coating composition of the present invention has an improved dielectric constant and superior mechanical strength and electric properties.

Abstract: A cerium oxide powder for one-component CMP slurry, which has a specific surface area of 5 m2/g or more, and a ratio of volume fraction of pores with a diameter of 3 nm or more to that of pores with a diameter less than 3 nm of 8:2˜2:8, is disclosed. A method for preparing the same, a one-component CMP slurry comprising the same as an abrasive material, and a method of shallow trench isolation using the one-component CMP slurry are also disclosed. The CMP slurry causes no precipitation of the cerium oxide powder even if it is provided as a one-component CMP slurry, because the CMP slurry uses, as an abrasive material, cerium oxide powder that is obtained via a low-temperature calcination step, optionally a pulverization step, and a high-temperature calcination step and has a high pore fraction and low strength.

Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.

Abstract: The present invention relates to a coating composition for a dielectric insulating film comprising a) an organosiloxane polymer, b) first metal ions selected from the group consisting of Rb ions, Cs ions, and a mixture thereof, and c) an organic solvent, in which the first metal ions are comprised at 1 to 200 ppm based on the weight of the composition, a dielectric insulating film prepared therefrom, and an electric or electronic device comprising the same. A dielectric insulating film prepared from the coating composition of the present invention has an improved dielectric constant and superior mechanical strength and electric properties.

Abstract: Disclosed is a novel radially multi-branched polymer. The radially multi-branched polymer includes a central molecule to which side-branches are bonded in at least three positions and has an average molecular weight of 500 to 100,000, the side-branch being selected from the group consisting of a polyalkylene oxide, a polyacrylate, a polyester, a polyamide and derivatives thereof. The radially multi-branched polymer is used for manufacturing a low dielectric insulating film to provide a low dielectric insulating film having easily controllable micropores.

Abstract: The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Abstract: The present invention relates to a coating composition for a film with low refractive index and a film prepared therefrom, and more precisely, a coating composition with low refractive index which contains dispersed porous organic/inorganic hybrid nano-particles or a colloid containing the dispersed nano-particles, a photocurable compound having unsaturated functional groups, photoinitiator or photosensitizer, or an organic siloxane thermosetting compound, and a solvent and a film prepared therefrom. According to the present invention, porous particles have been formed by using a structural regulator in a silane compound at a specific size, in order to be fitted for a film with low refractive index, and then the structural regulator has been eliminated by a simple process beforeforming the film, resulting in preparation of a film with extremely low refractive index at a low temperature of up to 120° C.

Abstract: The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. In detail, the present invention provides: a process for preparing an organic silicate polymer comprising a polymerization step in the absence of homogenizing organic solvents, of mixing and reacting organic silane compounds with water in the presence of a catalyst to hydrolyze and condense the silane compounds, that is thermally stable and has good mechanical and crack resistance properties; and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.

Abstract: The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Abstract: Described is a radially multi-branched polymer represented by the following formula (I): ABi (I), which includes a central molecule (A) to which side-branches (B) are bonded in at least three positions (i?3). Also described are methods for preparing a multi-branched polymer as well as a porous insulating film including a multi-branched polymer.

Abstract: Disclosed is a resin composition which comprises a catalyst precursor for electroless plating to form an electromagnetic wave shielding layer. The resin composition comprises an organic polymer resin, a polyfunctional monomer having an ethylenically unsaturated bond, a photoinitiator, a silver organic complex precursor as a catalyst precursor, and an organic solvent. Further disclosed are methods for forming metal patterns using the resin composition and metal patterns formed by the methods. The methods comprise forming a pattern, reducing the pattern, and electroless plating the reduced pattern. A patterned layer of the catalyst formed using the resin composition is highly adhesive, a loss of the catalyst during a wet process is substantially prevented, and an increase in plating rate leads to the formation of a uniform, fine metal pattern after electroless plating. Electromagnetic wave shielding materials comprising the metal pattern can be used in the formation of films for shielding electromagnetic waves.

Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.

Abstract: The present invention provides a cobalt-based alloy electroless plating solution comprising a cobalt precursor, a tungsten precursor, a phosphorus precursor, a reducing agent, a complexing agent, a pH regulator and a stabilizer, in which the reducing agent is dimethylamine borane (DMAB) or borohydride and the stabilizer is one or more compounds selected from a group consisting of imidazole, thiazole, triazole, disulfide and their derivatives; and an electroless plating method using the cobalt-based alloy electroless plating solution, as well as a thin film prepared by the same. According to the present invention, the cobalt-based alloy electroless plating solution is stable enough for long-term reuse and prevents deterioration of metal thin-film quality by inhibiting the formation of a precipitate. The present invention further provides an electroless plating method using the cobalt-based alloy electroless plating solution, and a cobalt-based alloy thin film prepared by the same.

Abstract: Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.