Patents by Inventor Min-Jin Lee

Min-Jin Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110134161
    Abstract: A flexible printed circuit board (FPCB) capable of improving strength is disclosed, the FPCB comprising a base film; a copper layer on the base film, the copper layer including a circuit pattern, and a strength-reinforcing pattern in an area without the circuit pattern; and a coverlay film on the copper layer.
    Type: Application
    Filed: December 7, 2010
    Publication date: June 9, 2011
    Inventors: Ji Eun Son, Kyung Sik Dan, Se Min Lee, Min Jin Lee
  • Publication number: 20100313158
    Abstract: A method for editing data in a mobile terminal configured to conveniently change a symbol and a mobile terminal using the method for editing data are disclosed, wherein the method includes displaying an inputted data on a touch screen, displaying on the touch screen a progress bar including a handler if a progress bar display signal is inputted, generating an undo signal or a redo signal based on a drag direction by touching the handler, and deleting the data in response to the undo signal, or reinstate the data in response to the redo signal.
    Type: Application
    Filed: May 4, 2010
    Publication date: December 9, 2010
    Inventors: Min Jin Lee, Hyoung Mi Kim, Il Kook Kim, Young Hoon Lee, Jin A. Chang, Seong Ki Sohn, Hyun Bo Choi, Jae Yeon Kim
  • Publication number: 20050023634
    Abstract: Provided is a method of fabricating a shallow trench isolation (STI) structure having a high aspect ratio and improved insulating properties. The exemplary method includes filling a shallow trench isolation region opening with an undoped polysilicon layer, removing an upper portion of the undoped polysilicon layer to form a second opening having a reduced aspect ratio relative to the original opening and filling the second opening with an insulating material to complete the STI structure. Additional protective layers including silicon oxide, silicon nitride and/or a capping layer may be provided on the sidewalls of the opening before depositing the undoped polysilicon.
    Type: Application
    Filed: June 8, 2004
    Publication date: February 3, 2005
    Inventors: Byoung-Moon Yoon, Min-Jin Lee, Yong-Sun Ko, In-Seak Hwang, Won-Jun Lee