Abstract: A display device includes a plurality of signal lines formed in a display area, a pixel array connected to the plurality of signal lines and including a plurality of pixels arranged in a matrix, a scan driving circuit and a data driving circuit formed in a non-display area and electrically connected to the plurality of signal lines, and a dummy pattern formed in the non-display area in a position adjacent to the pixel array along an outer boundary of the pixel array. The dummy pattern is formed to be parallel to a first pixel in a position spaced apart from the first pixel located at an edge of the pixel array in the non-display area by a predetermined distance.

Abstract: A display device includes a plurality of signal lines formed in a display area, a pixel array connected to the plurality of signal lines and including a plurality of pixels arranged in a matrix, a scan driving circuit and a data driving circuit formed in a non-display area and electrically connected to the plurality of signal lines, and a dummy pattern formed in the non-display area in a position adjacent to the pixel array along an outer boundary of the pixel array. The dummy pattern is formed to be parallel to a first pixel in a position spaced apart from the first pixel located at an edge of the pixel array in the non-display area by a predetermined distance.

Abstract: A method of forming fine patterns on a semiconductor substrate includes forming a first pattern, including first line patterns having a feature size F and an arbitrary pitch P, and forming a second pattern, including second line patterns disposed between adjacent first line patterns, to form a fine pattern having a half pitch P/2, the first and second line patterns being repeated in the first direction. A gap is formed in at least one first line pattern in a second direction, perpendicular to the first direction, to connect second line patterns positioned on each side of the first line pattern through the gap. At least one jog pattern, extending in the first direction, is formed from at least one first line pattern adjacent to the connected second line patterns. The jog pattern causes a gap in at least one of the connected second line patterns in the second direction.

Abstract: A method of forming fine patterns on a semiconductor substrate includes forming a first pattern, including first line patterns having a feature size F and an arbitrary pitch P, and forming a second pattern, including second line patterns disposed between adjacent first line patterns, to form a fine pattern having a half pitch P/2, the first and second line patterns being repeated in the first direction. A gap is formed in at least one first line pattern in a second direction, perpendicular to the first direction, to connect second line patterns positioned on each side of the first line pattern through the gap. At least one jog pattern, extending in the first direction, is formed from at least one first line pattern adjacent to the connected second line patterns. The jog pattern causes a gap in at least one of the connected second line patterns in the second direction.

Abstract: A semiconductor device includes a substrate, and a plurality of active pillars arranged in a pattern of alternating even and odd rows and alternating even and odd columns, each active pillar extending from the substrate and including a channel portion, wherein the odd columns include active pillars spaced at a first pitch, the first pitch being determined in the column direction, the even columns include active pillars spaced at the first pitch, the even rows include active pillars spaced at a third pitch, the third pitch being determined in the row direction the odd rows include active pillars spaced at the third pitch, and active pillars in the even columns are offset by a second pitch from active pillars in the odd columns, the second pitch being determined in the column direction.