Abstract: Provided is a drop-type drug tube. The drop-type drug tube includes a body part which defines an outer appearance and in which a drug is accommodated, and a cover part integrated with the body part and provided to be removed when the drug is used. The body part includes a drug accommodation part having an internal space to accommodate the drug, a body support part provided to extend to the outside of the drug accommodation part, an upper insertion part inclinedly extending upward from the drug accommodation part and the body support part so as to be away from the cover part, and a lower insertion part provided to face the upper insertion part and inclinedly extending downward from the drug accommodation part and the body support part so as to be away from the cover part.

Abstract: Disclosed is a semiconductor device including a first channel layer on a substrate, and a second channel layer on the first channel layer, the first and second channel layers extending in a first direction while being spaced apart from the substrate, and including a 2D semiconductor material, a gate structure on the substrate, the gate structure extending in a second direction, and being penetrated by the first and second channel layers, and source/drain contacts on side surfaces of the gate structure and being connected to the first and second channel layers. The gate structure includes a first gate portion between the substrate and the first channel layer and having a first gate length, a second gate portion between the first and second channel layers and having a second gate length, and a third gate portion on an upper surface of the second channel layer and having a third gate length.

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate; a first interlayer insulating layer, on the substrate, comprising a first interconnection; a common source plate on the first interlayer insulating layer; a conductive layer extending in a first direction on the common source plate; a ferroelectric layer on one sidewall of the conductive layer; a channel layer on the ferroelectric layer; a first conductive pillar, on the channel layer, penetrating the common source plate and being connected to the first interconnection; and a second conductive pillar, on the channel layer, spaced apart from the first conductive pillar in the first direction and connected to the common source plate, the ferroelectric layer and the channel layer between the common source plate and the first conductive pillar.

Abstract: A non-volatile memory device includes a substrate; an insulating layer on the substrate; a bit line isolation layer on the insulating layer; a common source line conductive layer on the bit line isolation layer; a ferroelectric memory cell on the bit line isolation layer; a bit line connected to a top of the ferroelectric memory cell; and a common source line connected to the common source line conductive layer and electrically connected to the ferroelectric memory cell, wherein the ferroelectric memory cell includes a ferroelectric layer, a channel layer, a first conductive filler connected to the ferroelectric layer and the channel layer and extending in a vertical direction, and a second conductive filler connected to the ferroelectric layer and the channel layer and extending in the vertical direction, the first conductive filler is connected to the bit line, and the second conductive filler is connected to the common source line.

Abstract: A resistive memory device includes: a substrate; a plurality of row lines extending in a first direction and spaced apart from each other in a second direction and a third direction, on the substrate, wherein the first direction, the second direction, and the third direction intersect each other; a plurality of column lines extending in the second direction and spaced apart from each other in the first direction, on the substrate; a plurality of upper selection lines extending in the second direction, between the row lines and the column lines; a channel layer extending in the third direction and connected to the plurality of row lines; and a first impurity region and a second impurity region spaced apart from each other in the third direction with the upper selection line interposed therebetween.

Abstract: The present invention relates to a tube assembly for dripping. According to an embodiment, a tube assembly for dripping includes a tube (100) having a hole (H) at an upper portion thereof, and a filter tip (200) having a tip (210) including, an insertion part (211) inserted into the hole (H) of the tube (100) and, an expansion part (212) connected to the insertion part (211) and having a diameter that is larger than that of the hole (H), and a discharge pipe (213) connected to the expansion part (212) and acting as a passage, through which a solution (S) stored in the interior of the tube (100) is discharged, wherein a discharge adjusting part (213a) having a discharge hole (h) having a predetermined diameter (d1) is formed in the interior of the discharge pipe (213) that is spaced apart from a lower end of the discharge pipe (213) by a predetermined distance.

Abstract: The present invention relates to a tube assembly for dripping. According to an embodiment, a tube assembly for dripping includes a tube (100) having a hole (H) at an upper portion thereof, and a filter tip (200) having a tip (210) including, an insertion part (211) inserted into the hole (H) of the tube (100) and, an expansion part (212) connected to the insertion part (211) and having a diameter that is larger than that of the hole (H), and a discharge pipe (213) connected to the expansion part (212) and acting as a passage, through which a solution (S) stored in the interior of the tube (100) is discharged, wherein a discharge adjusting part (213a) having a discharge hole (h) having a predetermined diameter (d1) is formed in the interior of the discharge pipe (213) that is spaced apart from a lower end of the discharge pipe (213) by a predetermined distance.