Patents by Inventor Min-jung Jin

Min-jung Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • One time programmable memory device, method of manufacturing the same, and electronic device including the same
    Patent number: 10186516
    Abstract: A one time programmable (OTP) memory device, a method of manufacturing the same, and an electronic device including the same, which lower a programming voltage to enhance programming efficiency, increase reliability of peripheral input/output (I/O) elements used for a design of the OTP memory device, and simplify the design, are provided. The OTP memory device includes a transistor including one of a first gate structure including a high-k dielectric layer, a rare earth element (RE) supply layer, and a second metal layer, a second gate structure including the high-k dielectric layer, a first metal layer, and the second metal layer, and a third gate structure including the high-k dielectric layer and the second metal layer.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: January 22, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-jung Jin, Sang-woo Pae, Hyun-min Choi
  • ONE TIME PROGRAMMABLE MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
    Publication number: 20170154890
    Abstract: A one time programmable (OTP) memory device, a method of manufacturing the same, and an electronic device including the same, which lower a programming voltage to enhance programming efficiency, increase reliability of peripheral input/output (I/O) elements used for a design of the OTP memory device, and simplify the design, are provided. The OTP memory device includes a transistor including one of a first gate structure including a high-k dielectric layer, a rare earth element (RE) supply layer, and a second metal layer, a second gate structure including the high-k dielectric layer, a first metal layer, and the second metal layer, and a third gate structure including the high-k dielectric layer and the second metal layer.
    Type: Application
    Filed: November 9, 2016
    Publication date: June 1, 2017
    Inventors: Min-jung Jin, Sang-woo Pae, Hyun-min Choi