Patents by Inventor Min Ki Kwon
Min Ki Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10761374Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a first display panel and a second display panel. A liquid crystal layer is between the first display panel and the second display panel with a sealant therebetween. The first display panel includes a display area and a non-display area. First light blocking members are disposed in the non-display area. The liquid crystal layer includes a plurality of liquid crystal molecules and a plurality of protrusions. The protrusions are adjacent to at least one of the first display panel or the second display panel.Type: GrantFiled: September 21, 2018Date of Patent: September 1, 2020Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Gi Hoon Yang, Ju Young Sung, Min Ki Kwon, Chu Young Seo, Bo Seul Lee
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Publication number: 20190265553Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a first display panel and a second display panel. A liquid crystal layer is between the first display panel and the second display panel with a sealant therebetween. The first display panel includes a display area and a non-display area. First light blocking members are disposed in the non-display area. The liquid crystal layer includes a plurality of liquid crystal molecules and a plurality of protrusions. The protrusions are adjacent to at least one of the first display panel or the second display panel.Type: ApplicationFiled: September 21, 2018Publication date: August 29, 2019Inventors: Gi Hoon Yang, Ju Young Sung, Min Ki Kwon, Chu Young Seo, Bo Seul Lee
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Patent number: 9166098Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: GrantFiled: December 18, 2008Date of Patent: October 20, 2015Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Patent number: 8405103Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.Type: GrantFiled: July 30, 2008Date of Patent: March 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Ja Yeon Kim, Yong Chun Kim, Bang Won Oh, Seok Min Hwang, Je Won Kim
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Patent number: 8269242Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.Type: GrantFiled: December 1, 2009Date of Patent: September 18, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Chu Young Cho, Chang Hee Cho, Yong Chun Kim, Seung Beom Seo, Myung Goo Cheong, Dong Joon Kim
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Patent number: 7842539Abstract: There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.Type: GrantFiled: June 24, 2008Date of Patent: November 30, 2010Assignee: Gwangju Institute of Science and TechnologyInventors: Seong Ju Park, Min Suk Oh, Dae Kyu Hwang, Min Ki Kwon
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Patent number: 7763881Abstract: There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.Type: GrantFiled: July 30, 2008Date of Patent: July 27, 2010Assignee: Samsung LED., Ltd.Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Ja Yeon Kim, Dong Joon Kim, Yong Chun Kim, Je Won Kim
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Publication number: 20100181588Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.Type: ApplicationFiled: December 1, 2009Publication date: July 22, 2010Inventors: Dong Yul LEE, Seong Ju Park, Min Ki Kwon, Chu Young Cho, Chang Hee Cho, Yong Chun Kim, Seung Beom Seo, Myung Goo Cheong, Dong Joon Kim
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Patent number: 7755098Abstract: Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.Type: GrantFiled: April 7, 2009Date of Patent: July 13, 2010Assignee: Gwangju Institute of Science and TechnologyInventors: Seong-Ju Park, Dae-Kue Hwang, Min-Ki Kwon, Min-Suk Oh, Yong-Seok Choi
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Publication number: 20100019223Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: ApplicationFiled: December 18, 2008Publication date: January 28, 2010Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Publication number: 20090256148Abstract: Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.Type: ApplicationFiled: April 7, 2009Publication date: October 15, 2009Applicant: Gwangju Institute of Science and TechnologyInventors: Seong-Ju PARK, Dae-Kue HWANG, Min-Ki KWON, Min-Suk OH, Yong-Seok CHOI
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Patent number: 7575944Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.Type: GrantFiled: August 13, 2007Date of Patent: August 18, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sun Woon Kim, Seong Ju Park, Ja Yeon Kim, Min Ki Kwon, Dong Ju Lee, Jae Ho Han
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Publication number: 20090184334Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.Type: ApplicationFiled: July 30, 2008Publication date: July 23, 2009Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Ja Yeon Kim, Yong Chun Kim, Bang Won Oh, Seok Min Hwang, Je Won Kim
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Publication number: 20090032800Abstract: There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.Type: ApplicationFiled: July 30, 2008Publication date: February 5, 2009Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Ja Yeon Kim, Dong Joon Kim, Yong Chun Kim, Je Won Kim
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Publication number: 20090001363Abstract: There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.Type: ApplicationFiled: June 24, 2008Publication date: January 1, 2009Applicant: Gwangju Institute of Science and TechnologyInventors: Seong Ju Park, Min Suk Oh, Dae Kyu Hwang, Min Ki Kwon
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Publication number: 20080293177Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.Type: ApplicationFiled: August 13, 2007Publication date: November 27, 2008Inventors: Sun Woon Kim, Seong Ju Park, Ja Yeon Kim, Min Ki Kwon, Dong Ju Lee, Jae Ho Han